国家/地区 中国（5） 美国（5） 欧洲专利局（EPO）（3） 韩国（3） 世界知识产权组织（3） 日本（2） 墨西哥（2） 台湾（2）
IPC部 C（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C01B032/20（7）
发明人
公开年 2016（2） 2017（2）
申请年 2016（3） 
专利权人

Forming graphene layer for e.g., LEDs, by mixing carbon source with horizontally oriented molten solvent, precipitating carbon source to form graphite layer across molten solvent, and separating graphite layer into a set of graphene layers.

SUNG C, HU S C, LIN I, YU C

Graphene and micrometric graphite particles manufacturing used in reinforcing material, pigment industry, paints, lubricants, polymer processing and alteration, involves mixing micron sized graphite, and deionized water.

SOLIS A S, CHAVEZ R P, BRITO O M, TORRES L M, MORENO MORALES R L, GUADALUPE DE LA TORRE SAN

Production of layered structure involves depositing catalyst structure onto substrate top surface containing non-electroconductive material, depositing graphene structure onto catalyst structure, and partially removing catalyst structure.

LUTZ T, PURKL F, ROELVER R, ROHLFING F

Doping method of graphene for manufacturing graphene composite electrode and graphene structure, involves forming precursor polymer layer for doping on substrate, and positioning graphene on substrate.

MOON J, PARK W, PARK S, JO I, HONG B, SAN MOON J, SU C I, BAE P W, BEOM P S, HUI H B, ZHENSHAN W, WONBAE P, SUBEOM P, INSU J, BYUNGHEE H

Method for preparing mobile phone rear cover heat abstractor film, involves preparing metal nickel layer by depositing one layer oxidation graphene, using electrochemical method and oxidation graphene reduction.

LIU L

Copper foil for manufacturing graphene, has specified sum total of oxides and sulfides having diameter of below preset value before heating under hydrogen and argon-containing atmosphere.

CHIBA Y, YAMAJI T, YOSHIHIRO C, TATSUYA Y, CHIBA G

Solar cell comprises graphene-based conductive layer located on glass substrate, and another second graphene-based conductive layer in contact with semiconductor layer that is located in absorbing layer.

VEERASAMY V S, VEERASAMY V