国家/地区 欧洲专利局（EPO）（5）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C30B025/02（5）
发明人 COJOCARU C（2）
公开年
申请年
专利权人 CENT NAT REC.（2） ECOLE POLYTE.（2）

Coating metal workpiece e.g. electrical connector, involves exposing workpiece to carbon-containing precursor gas and hydrogen gas at preset flow rate and total gas pressure, and exposing to carbon-containing precursor gas and carrier gas.

ADAMS H J

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Manufacturing film of graphene, comprises depositing metal layer on surface of substrate, and continuously realizing buried carbon rich area inside metal layer by creating and maintaining carbon rich area so as to form film of graphene.

COJOCARU C

Manufacture of graphene thin film used in metal oxides window electrodes for solid-state solar cells involves disposing catalyst thin film on back support substrate, introducing hydrocarbon, and heating to promote graphene growth.

VEERASAMY V S, VEERASAMY V

Controlled growth of graphene film comprises preparing substrate of metal layer having phase diagram with carbon on surface to obtain homogeneous solid solution, exposing layer to controlled flow e.g. carbon atoms and changing the phase.

BARATON L, COJOCARU C S, PRIBAT D, COJOCARU C