国家/地区 美国（29）
IPC部 C（29）
IPC大类 C01（29）
IPC小类 C01B（29）
IPC C01B031/02（25） B82Y030/00（21） B82Y040/00（21）
C01B031/04（21） C23C016/26（14） H01B001/04（9）
B32B009/00（6） B82B003/00（6） C23C016/44（5）
B05D005/12（4） C01B031/00（4） C30B029/02（4）
H01L029/786（4） B05D001/36（3） B32B009/04（3）
发明人 HONG B H（5） VEERASAMY V（4） VEERASAMY V S（4）
AHN J（3） BAE S K（3） CHOI J（3）
CHOI J Y（3） CHUNG H（3） CHUNG H J（3）
HEO J（3） HEO J S（3） KIM H K（3）
LEE Y（3） SEO S（3） SEO S A（3）
公开年 2011（29）
申请年 2010（15）  2011（11）  2009（3） 
专利权人 SAMSUNG ELEC.（8） UNIV SUNGKYU.（8） UNIV SUNGKYU.（5） GUARDIAN GLA.（4）
GUARDIAN IND（4） GUARDIAN IND.（4） GRAPHENE SQU.（2） SAMSUNG TECH.（2）
UNIV SUNGKYU.（2） UNIV SUNGKYU.（2） VEERASAMY V .（2）

Manufacture of graphene involves using face centered cubic metal catalyst with single oriented texture.

CHA S W, HONG B H, HONG S Y, JUNG M H, KIM K E, KIM K H, MAENG K S, PARK C W, PARK S B

New graphene comprising a structure of carbon atoms partially substituted with boron atoms and nitrogen atoms, where the graphene has a band gap, useful in a channel of a transistor.

LEE S, SEO S, WOO Y, CHUNG H, HEO J, LEE S H, SEO S A, WOO Y S, CHUNG H J, HEO J S, HUN L S

Method for depositing graphene on substrate for semiconductor device, involves heating substrate in chemical vapor deposition chamber and flowing carbon precursor into chamber.

PADHI D, JANZEN J, SHAIKH S, KIM B, CHIN B, KIM B H

Forming graphene nano ribbon used in display device involves depositing graphene sheet on surface of substrate, forming plasma mask with nano pattern on sheet, and forming nano pattern in sheet by plasma treating stack structure having mask.

SHIN H, CHOI J, LEE Y, HAN G, CHOI J Y, HAN G H, LEE Y H, SHIN H J

Resin plating comprises forming a graphene thin layer on a resin substrate and electroplating the resin substrate having the graphene thin layer formed on it.

BAE A H, SON S I, NAM J D, LEE J H, HWANG T S, OH J S, LEE H, EAH H B, SANG I S, JAE D N, JOON S O, JUN H L, TAE S H, HWANG T, LEE J, NAN J, PAE A, SUN S, OU J

Producing two-dimensional nanomaterials comprises e.g. providing a mixture comprising e.g. graphene oxide particles and water, adding a sol precursor compound to the mixture, and reacting the mixture in a sol/gel process to form gel.

FENG X, IVANOVICI S, MUELLEN K, YANG S, MULLEN K

Method of manufacturing graphene used for electronic device, involves forming graphene directly on germanium layer by supplying carbon-containing gas into chamber in which substrate is located.

LEE E, CHOI B, WHANG D, LEE J, CHOI B L, LEE E K, LEE J H, WHANG D M

Manufacturing graphene comprises preparing a subject substrate, forming a metal thin film, supplying a carbon source material, heating, diffusing carbon atoms, and forming graphene on the subject substrate.

KWON S, PARK K, YOON E, KWAK J, KWON S Y, YOON U

Carbon-film laminate used for graphene-based electronic device, has monocrystal substrate, copper single-crystal thin film epitaxially grown on substrate, and graphene formed on copper single-crystal thin film.

HASEGAWA MASATAKA, ISHIHARA MASATOU, KOGA YOSHINORI, KIM JAEHO, TSUGAWA KAZUO, IIJIMA SUMIO, HASEGAWA M, ISHIHARA M, KOGA Y, KIM J, TSUGAWA K, IIJIMA S, YOSHINORI K, HO K J, KAZUO T, SUMIO I, MASATAKA H, MASATOU I, JAEHO K

Manufacture of graphene fiber used for e.g. coaxial cable, involves forming linear pattern on substrate having metal layer, reacting linear pattern having metal layer with reactive gas, and impregnating substrate with linear pattern.

BAE S K, HONG B H, KIM H K, KIM K S, HUI H B, SU K G, GEUN K H, GANG B S