国家/地区 韩国（22）
IPC部 C（22）
IPC大类 C01（22）
IPC小类 C01B（22）
IPC C01B031/02（20） C23C016/26（12） C01B031/04（11）
B82Y030/00（8） B82Y040/00（8） B32B009/00（6）
C23C016/44（4） B01J019/08（3） B05D001/18（3）
B05D001/36（3） B05D003/02（3） C01B032/186（3）
B05D003/10（2） B05D003/12（2） B32B009/04（2）
发明人 HONG B H（4） CHO S M（3） CHOI J（3）
CHOI J Y（3） WON D K（3） AHN J（2）
BAE S（2） BAE S K（2） CHUNG H（2）
CHUNG H J（2） HEO J（2） HEO J S（2）
HUH J（2） HUH J S（2） JUNG H（2）
公开年 2011（15） 2012（4） 2010（3）
申请年 2010（22）
专利权人 SAMSUNG ELEC.（6） UNIV SUNGKYU.（6） SAMSUNG TECH.（4） UNIV SUNGKYU.（4）
GRAPHENE SQU.（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Manufacturing method of graphene, involves growing graphene on surfaces of floating sample in air.

JOO I L, CHAN Y H, KWONJAE Y, JUNG H K, YONG S Y, YONG H S, GEUN W L

Method for improving graphene property involves irradiating laser beam on graphene grown on substrate, and heat treating.

LEE K J, CHOI I S, CHOI S Y, HONG B H

Graphene synthesis chamber has multiple through holes that are formed for connecting seating place and portal.

CHO S M, WON D K

Manufacture of graphene involves transferring base component comprising support layer, separation layer, and catalyst metal layer into chamber, passing carbon vapor source into chamber, and cooling base component.

CHO S M, WON D K

Graphene sheet manufacturing method, involves preparing and connecting base member with catalyst metal layer, fixing graphene layer with base member, and removing catalyst metal layer from separated graphene layer.

WON D K, CHO S M, RYU J C

Method of manufacturing graphene used for electronic device, involves forming graphene directly on germanium layer by supplying carbon-containing gas into chamber in which substrate is located.

LEE E, CHOI B, WHANG D, LEE J, CHOI B L, LEE E K, LEE J H, WHANG D M

Graphene manufacturing device for forming graphene thin film on silicon wafer, has substrate lifting unit for ascending and descending substrate, and gas supply part for supplying carbon source and purging gas to vacuum chamber.

CHOI K J, WOONG C S

Roll-to-roll doping method for large-area graphene area, involves passing graphene film through doping solution that contains dopant or dopant vapor for doping graphene film.

AHN J, BAE S, HONG B H, KIM H K, BAE S K, GANG B S, GEUN K H, HUI H B, HYEON A J

Depositing a graphene film involves supplying a gaseous-phase graphene source to a substrate, adsorbing the graphene source to form an adsorbed layer on the substrate, and activating the adsorbed layer by heating the adsorbed layer.

AHN S, KANG S Y

Applying a coating composition on substrate comprises preparing a coating by mixing carbon in form of carbon nanotubes, graphene and/or fullerenes with metal particles and two-dimensionally or selectively applying the coating on substrate.

ADLER U, RODE D, BURESCH I, WANG J, FRECKMANN D, SCHMIDT H, ROHDE D, WANG Y