国家/地区 韩国（3） 中国（2） 欧洲专利局（EPO）（2）
IPC部 B（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C01B032/194（5）
发明人
公开年 2022（4）
申请年 2021（5）
专利权人

Direct growth method of multilayer graphene through pressure heat treatment, comprises forming etch stop layer, forming metal catalyst layer, forming amorphous carbon layer and directly growing multilayer graphene on seed layer.

KIM H, KIM S K, MI K H, YOO C S, JOJINWOO, KIM H Y, JEONJUNHYUCK, YUNSUNGHO, SUNG K H, LEE S M

Manufacturing graphene wrinkles using three-dimensional structure patterning process comprises etching transition metal thin film to form three-dimensional pattern and inserting into chemical vapor deposition chamber to synthesize graphene.

KIM J, WIMALANANDA M D S, LEE J M

Method for preparing micro-nano composite of graphene quantum dot array, involves removing mask glue, annealing to remove residual glue, and etching to remove surface sacrificial layer to obtain final graphene array structure.

ZHAO Q, YANG Z, CHEN R, PENG F, YAN Z, CHANG Z, HUANG X

Removing polymethylmethacrylate (PMMA) from graphene surface by subjecting PMMA layer to deep UV light irradiation, treating irradiated PMMA layer to remove PMMA layer and drying cleaned layer located on substrate in stream of nitrogen gas.

ALEXEEVA N, KASALYNAS I

Pellicle film used for preventing dust from adhering to photomask or reticle, comprises layers laminated to each other and/or layers provided with one or more openings.

TAKADA N, SEKI K, KODERA Y, SEKIGAZUNORI, YUTAKA G