国家/地区 中国（6）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C01B032/186（6）
发明人 LI J（6）
公开年 2021（6）
申请年 2021（6） 
专利权人

Single-layer planar graphene having uniform layer thickness, where graphene film is obtained by pre-treating copper foil, drying, placing in quartz tube, introducing argon, heat-treating, cooling, curing and finally transferring graphene on copper foil.

LI J, CHEN J, YE L, YU M

Method for forming graphene-substrate composite structure, involves fixing substrate through chemical vapor deposition chamber continuously at certain rate, where chemical vapor deposition in chemical vapor deposition chamber is deposited on substrate.

QI Y, CHENG Y, LI J, SHI P, LIU Z

Silicon-based composite material useful as cathode material in lithium ion battery, comprises silicon and/or silicon oxide as the core, where composite layer has a continuous dense structure.

YUE F, CHENG X, LI G, HUANG L, LI J

Method for preparing copper-based graphene coating structure, involves controlling decomposition rate and nucleation density, and coating graphene on surface of copper-based structure to complete preparation of double-sided superimposed copper-based graphene coating structure.

SHI K, SU J, LIANG H, XU J, WU S, LI J, WANG G

Chemical vapor deposition (CVD) graphene production device comprises movably connected support base, multiple graphene growth substrates and top cover, where support base is ring-shaped closed structure.

ZHANG B, LI J, WANG X, XU Z

Preparing wrinkle-free graphene film by ultrasonically cleaning metal substrate with acetone, absolute ethanol and deionized water, and drying, placing in chemical vapor deposition system, feeding hydrogen and argon, and naturally cooling.

LI J, GUO Z