国家/地区 中国（2） 美国（2） 世界知识产权组织（2）
IPC部 C（6） H（3）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C01B032/184（6）
发明人
公开年 2023（6）
申请年 2022（5） 
专利权人

Preparing secondary enhanced graphene gas gel useful in shoes, comprises introducing substrate layer on prepared graphene gas gel surface, performing chemical vapor deposition reaction and growing sheet layer or spherical graphene aggregate on surface of substrate layer.

ZHENG L, SHEN Y, ZHENG Y, WU L, WANG H

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Device for realizing self-assembling of graphene film based on super-cooling boiling, has heating copper rod that is divided into upper and lower two layers, where upper layer is covered by polytetrafluoroethylene block.

TAO P, SHANG W, DENG T, FU B, CHU B

Coating metal surface with graphene used in organic LED by depositing first graphene molecular precursor on top of metal surface and transforming deposited first graphene molecular precursor into surface bound graphene interfacial layer.

NAVEH D Y

Processing semiconductor for producing high quality devices and structures, involves delivering carbon-containing precursor and hydrogen-containing precursor to processing region of semiconductor processing chamber, forming layer of graphene on substrate positioned in processing region of chamber.

INGLE N K, MALLICK A B, SINGHA R S, WANG J

Device for producing graphene layer, has one electrode which is connected to positive pole of voltage source, and other electrode that is connected to negative pole and is provided for carbon ions accumulate in graphene attachment region so as to form graphene layer.

KREISCHER U