国家/地区 中国（53）
IPC部 C（53） B（33） H（25）
A（5） G（4） D（2）
F（2）
IPC大类 C01（53） H01（25） B82（20）
C08（14） B01（11） C09（11）
C07（6） B32（5） C23（5）
A61（4） B05（4） B29（4）
C04（4） G01（4） H05（4）
IPC小类 C01B（53）
IPC C01B032/182（53）
发明人 KWON W（4） KWON W J（4） SOHN K（4）
SOHN K N（4） ZHANG J（4） LEE M J（3）
LI M（3） PARK S H（3） TOUR J M（3）
AKASAKA Y（2） AKITA M（2） CESAREO G（2）
GARCIA S L J（2） GARCIA SAN LUIS J（2） HARADA Y（2）
公开年 2016（25） 2015（23） 2017（5）
申请年 2015（53）
专利权人 LG CHEM CO L.（4） LG CHEM LTD（4） UNIV RICE WI.（3） UNIV RICE WI.（3）
CORNING INC（2） DIRECTA PLUS.（2） JANG B Z（2） JINAN SHENGQ.（2）
JINAN SHENGQ.（2） NANOTEK INST.（2） NINGBO INST .（2） REPSOL SA（2）
TORAY IND IN.（2） TOSHIBA CORP（2） TOSHIBA KK（2） UNIV CALIFOR.（2）
UNIV SEOUL N.（2） ZHAMU A（2）

Graphene dispersion agent comprises N-methyl-pyrrolidone, sodium hexadecylbenzenesulfonate, sodium dodecylbenzenesulfonate, polyethylene pyrrolidone, sodium lignosulfonate, sodium cholate hydrate and hexadecyltrimethylammonium bromide.

SONG Z, XIE Y

Production of graphene-reinforced polymer matrix composite involves mixing multiple particles of graphitic material and multiple particles of solid polymer carrier material to form mixture in impacting chamber of energy impacting apparatus.

ZHAMU A, JANG B Z

Method for forming e.g. drain contacts for e.g. graphene FET, involves forming grown-in graphitic interface layer at interface between source and graphene surface source contacts and drain contact and graphene surface drain contact.

COLOMBO L, VENUGOPAL A

Preparation of large-sized graphene involves ultrasonically treating mixture of graphite and concentrated sulfuric acid to obtain solution comprising upper graphene and lower concentrated sulfuric acid solution, and processing graphene.

FENG C, XU D

Production of integrated layer of highly oriented halogenated graphene sheets or molecules used as dielectric material component for microelectronic devices involves preparing graphene oxide dispersion or gel having graphene oxide sheets.

ZHAMU A, JANG B Z, ZHAMUARUNA

Production of graphene hybrid material for electronic devices e.g. microsupercapacitor, involves exposing precursor material and associating pseudocapacitive material with laser-induced graphene which is derived from precursor material.

TOUR J M, LI L, PENG Z, ZHANG J, TOUR J

Manufacture of graphene quantum dots from carbon source, involves exposing carbon source chosen from coal, coke, biochar, and/or asphalt to solution containing oxidant, and forming graphene quantum dots.

TOUR J M, METZGER A, YE R, MANN J, TOUR J

Graphene membrane film used in system for purifying solvent, comprises several plate-shaped laminated graphene flakes containing physical bond or chemical bond for connecting pair of layers, and has preset thickness and oxygen content.

LEE S H, KIM S J, SEO D K, KIM Y H, GEONHUI L, LEE S, KIM S

Method for transferring high-quality chemical vapor deposition-grown monolayers of graphene from copper formation substrates to target substrates, involves transferring graphene layer formed on formation substrate to target substrate.

JOHNSON B Y, MAZUMDER P, SONI K K

Formation process of graphene-coated glass, involves heating sandwich structure to predetermined temperature above release temperature of thermal release tape to remove tape or graphene from flexible glass substrate.

JOHNSON B Y, LIU X, MAZUMDER P, SONI K K, CHEN T L, MARTINFRANCES M M, PRUNERI V, CHEN T, MARCHENA M, MARTIN F M M