国家/地区 中国（5）
IPC部 B（5） C（5） H（3）
IPC大类 B82（5） C01（5） H01（3）
C30（2）
IPC小类 B82Y（5）
IPC B82Y030/00（5）
发明人
公开年 2012（2） 2013（2）
申请年 2011（5）
专利权人

Forming graphene layer on surface of substrate, comprises forming silicon-carbide film on free surface of silicon layer and gradually heating substrate until silicon of first row of atoms of silicon-carbide film is sublimated.

OUERGHI A

Producing isolated crystalline graphene, useful for manufacturing an electronic device e.g. programmable logic device, comprises forming a composition comprising magnesium and carbon, and isolating graphene from the composition.

HOSMANE N S, CHAKRABARTI A

Graphene structure for producing three-dimensional shape of e.g. electronic circuit, comprises template having three-dimensional shape and rod shape, graphene to cover portion of outer circumference of template, and supporting layers.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Growing graphene on silicon carbide substrate comprises positioning silicon carbide substrate in crucible, controlling pressure and heating to growth temperature and growing graphene on surface of substrate.

YAKIMOVA R, IAKIMOV T, SYVAEJAERVI M, SYVAJARVI M, SYVAE;JAE;RVI M

Manufacturing graphene, comprises performing vapor phase epitaxy on substrate comprising silicon carbide surface, and controlling sublimation of silicon from the substrate by flow of e.g. inert gas (argon) through epitaxial reactor.

STRUPINSKI W, STRUPIAFSKI W, STRUPINSKI W O