国家/地区 中国（8）
IPC部 C（8） B（7）
IPC大类 C01（8） B82（7） C23（6）
C22（4） B01（3） B21（3）
C30（2）
IPC小类 C01B（8）
IPC C01B031/04（8）
发明人 CHIBA G（3） CHIBA Y（3） YOSHIHIRO C（2）
公开年 2012（7）
申请年 2012（8）
专利权人 JX NIPPON MI.（3） NIPPON MININ.（3） NIPPON MININ.（3）

Copper foil used for manufacturing graphene, comprises copper with specific purity.

CHIBA Y, ONO T, CHIBA G

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Producing graphene, used in e.g. capacitor and ink, comprises providing metallic particles as templates, providing carbon source, reacting metallic particles and carbon source and forming graphene particles on metallic particles.

COLEMAN K

Copper foil for manufacturing graphene, has specified sum total of oxides and sulfides having diameter of below preset value before heating under hydrogen and argon-containing atmosphere.

CHIBA Y, YAMAJI T, YOSHIHIRO C, TATSUYA Y, CHIBA G

Structural graphene production on silicon carbide substrate for manufacturing microelectronic devices includes depositing layer of silicon dioxide as mask, coating mask surface, and exposing to form structured pattern.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Synthesizing graphene comprises refluxing reaction mixture of solvent e.g. water and carbonaceous material promoting polycyclic aromatic hydrocarbon formation, collecting and directing obtained vapors to substrate and recovering graphene.

SHANKMAN R S, HANKMAN R S

Copper foil used for manufacturing graphene, has glossiness or more than preset value, and average grain size more than preset value after being heated in atmosphere containing hydrogen and argon at specific conditions.

CHIBA YOSHIHIRO, CHIBA Y, YOSHIHIRO C, CHIBA G

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X