国家/地区 中国（12）
IPC部 C（12） B（7） H（7）
IPC大类 C01（12） H01（7） C23（5）
B01（4） B82（4） C09（2）
IPC小类 C01B（12）
IPC C01B031/04（12）
发明人 LI Y（2） NA D（2） NA D H（2）
YOON J（2） YOON J H（2）
公开年 2014（12）
申请年 2013（8）  2014（4） 
专利权人 HANWHA TECHW.（3） SAMSUNG TECH.（3） HANWHA AEROS.（2） SHANGHAI INS.（2）

Manufacture of graphene for electric component, involves forming metal catalytic layer on substrate, introducing cover material on catalytic layer, and growing graphene on catalytic layer by carrying out chemical vapor deposition.

CHO K, BONG H, CHO K W

Graphene ball conductive adhesive preparation by preparing polymer microsphere using monomer mixture, performing chemical vapor deposition to grow graphene on microsphere surface, and dispersing graphene ball into epoxy resin glue system.

CHEN Y, LI J, LI Y, ZHANG X, LEE Y

Preparing sulfur doped graphene using chemical vapor deposition method comprises e.g. providing metal substrate, placing in chemical vapor deposition reaction chamber, introducing inert gas, carrying out aeration and exhaust gas treatment.

LI T, LIANG C, WANG Y

Preparation of three-dimensional structured graphene and carbon nanotube material used for optoelectronic device, involves preparing substrate, growing graphene on substrate, patterning, preparing catalyst and growing carbon nanotubes.

LI Z, BAI B, YANG X, DAI Q, HE F, QIU X, KONG X

Manufacturing graphene film involves preparing catalyst metal having at least surface on which graphene is formed, forming support layer on graphene, and isolating graphene and support layer from catalyst metal.

NA D, LEE E, YOON J, NA D H, LEE E K, YOON J H, LI Y

Preparation of germanium-doped graphene involves placing substrate in catalytic reactor under vacuum condition, adding carbon element and germanium element to reactor and processing.

LIN Z

Forming graphene involves placing a substrate in processing chamber, adding cleaning gas including hydrogen and nitrogen, and carbon source, initiating microwave plasma, and subjecting the substrate to flow of cleaning gas and carbon source.

BOYD D A, YEH N, YEH N C

Graphene for electronic equipment e.g. display device, battery, photoelectric device and solar cell, contains nitrogen-containing organic compound.

NA D H, PARK E S, RYU J C, WON D K, CHEOL R J, NA D, WON D, PARK E, RYU J, YUAN D, YOO J H, LIM Y M, HUH Y

Formation of graphene for electronic device, involves forming graphene layer on catalytic metal layer, forming organic-inorganic hybrid film in uncured state on graphene layer, and curing.

MOON J, JUNG K, KANG E, KANG O, JEONG G, KANG E S

Fabricating graphene film for forming graphene based device e.g. dielectric capacitor, by heating substrate at specific temperature in chamber, introducing carbon source into the chamber and cooling substrate to room temperature.

OZKAN C S, OZKAN M, GUVENC A B, PAUL R K, LIN J, GHAZINEJAD M, PENCHEV M, GUO S, ZHONG J, HAYASHI K