国家/地区 中国（33）
IPC部 C（33） H（8） B（2）
G（2）
IPC大类 C01（33） C23（8） H01（6）
C30（2） H05（2）
IPC小类 C01B（33）
IPC C01B032/186（33）
发明人 CAI J（4） BAI Y（3） WANG J（3）
XIE G（3） ZHAO Y（3） FANG C（2）
GUO X（2） HAO Z（2） HONG J（2）
HUANG W（2） LI Y（2） LIN J（2）
MA Y（2） WU Q（2） XIA X（2）
公开年 2023（33）
申请年 2022（25）  2023（6）  2021（2） 
专利权人 GUANGDONG MO.（3） UNIV SOUTHWE.（3） SUZHOU SHENG.（2） UNIV SHAANXI.（2）
XIAMEN KNANO.（2）

Method for preparing non-contact limiting domain growth graphene, involves providing inner cavity of CVD furnace with barrier layer, and placing growth substrate below barrier layer, distance interval between barrier layer and growth substrate.

CHEN G, CHEN Q, CAI J

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

High-quality graphene powder growth and synchronous hydrogen production method, involves generating cracking reaction in liquid metal by carbon source gas, and collecting graphene bubble rising to surface of liquid metal and exhaust gas to purify exhaust gas to obtain hydrogen.

FANG C, LIN J, HUANG W, HONG J

Production device with graphene recycling structure, has graphene top portion that is fixedly connected with gas conveying box, and inner top graphene of production device main portion is connected with air inlet pipe.

ZHU J

Preparation of carbon nano tube/graphene/pyrolytic carbon composite material used in e.g. aviation, involves growing graphene in carbon nano-tube in graphene/nickel foam, and filling pyrolysis carbon using precursor dipping cracking ethod to fill pyrolytic carbon.

SHAO D, WANG S, LI Y, YANG J, JIA X, SONG H, WANG C, WEI P, FENG L, DING S

Preparing secondary enhanced graphene gas gel useful in shoes, comprises introducing substrate layer on prepared graphene gas gel surface, performing chemical vapor deposition reaction and growing sheet layer or spherical graphene aggregate on surface of substrate layer.

ZHENG L, SHEN Y, ZHENG Y, WU L, WANG H

Preparation method of easy-to-exfoliate near-free state graphene useful in the field of semiconductor electronic devices and energy conversion, involves pretreating metal substrates, placing substrate in quartz assembly, placing buffer material between quartz assembly and metal substrate.

ZHAO X, YU F, CHENG X, LI Y, GUO X, ZHANG X, WANG P, SUN L

Preparing graphene crystal using plasma enhanced chemical vapor deposition device involves placing insulating substrate in synthesis chamber, pumping synthesis chamber to vacuum, introducing growth gas, generating plasma and transversely growing graphene small crystal nucleus on insulating substrate.

MA S, LIU B

Semiconductor device comprises interconnection structure comprises seed layer disposed on first conductive layer, seed layer including graphene; and metal migration barrier layer disposed on seed layer, metal migration barrier layer including MXene.

HAN J H, KOO W T, HAN Z, KOO W, TAE K W

Method for preparing high quality large diameter and small layer graphene powder, involves generating air bubbles in system, and obtaining high quality large-diameter and small-layer graphene powder by adopting gas-solid separation.

XIE X, ZHAO Y, ZHOU W