国家/地区 欧洲专利局（EPO）（6）
IPC部 C（6）
IPC大类 C01（6） H01（6） B82（5）
C23（3） B01（2） B05（2）
C30（2）
IPC小类 C01B（6）
IPC H01L021/02（6）
发明人 ZENASNI A（2）
公开年 2013（2）
申请年 2011（2） 
专利权人 COMMISSARIAT.（4）

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F

Producing graphene film used in e.g. biological sensors involves forming graphene film by epitaxial deposition in contact with platinum-containing monocrystalline zone of substrate catalyst layer using chemical vapor deposition device.

GOLANSKI L, FOURNEL F, FUGIER P, RODRIGUEZ G

Synthesizing graphene sheet on platinum silicide, by forming stack by e.g. placing first layer of diffusion barrier material on substrate and placing second layer of silicon carbonaceous material on first layer and thermally treating stack.

ZENASNI A

Forming graphene layer on surface of substrate, comprises forming silicon-carbide film on free surface of silicon layer and gradually heating substrate until silicon of first row of atoms of silicon-carbide film is sublimated.

OUERGHI A

Manufacturing structure comprising semiconductor substrate and modified graphene layer, comprises supplying initial structure comprising standard graphene layer, and hydrogenating initial structure with exposure dosage of hydrogen gas.

CHIANG S, ENRIQUEZ H, OUGHADDOU H, SOUKIASSIAN P, TEJEDA G A, VIZZINI S, TEJEDA GALA A, GALA A T

Process for elaboration of graphene, useful e.g. in nanoelectronics, comprises depositing layer comprising amorphous carbon on substrate and annealing layer by photonic- and/or electronic-irradiation to obtain layer comprising graphene.

ZENASNI A, AJIJEU J