国家/地区 日本（5）
IPC部 C（5）
IPC大类 C01（5） C23（5） H01（3）
G01（2）
IPC小类 C01B（5）
IPC C01B032/186（5）
发明人 IFUKU R（2） MATSUMOTO T（2） RYOTA I（2）
TAKASHI M（2） UMENO M（2）
公开年 2020（5）
申请年 2019（3）  2018（2） 
专利权人 SIZU TECHNO .（2） TOKYO ELECTR.（2）

Detecting abnormal growth of graphene by preparing inspected object having graphene film formed by chemical vapor deposition on substrate, using dark-field optical system to receive light from film and detecting abnormal growth of graphene.

IFUKU R, MATSUMOTO T, FUJIO A, SAITO K, RYOTA I, TAKASHI M, AKIRA F, KOUSAKU S

Forming graphene structure by preparing to-be-processed substrate, pre-processing by supplying gas containing carbon containing gas to to-be-processed substrate, and forming a graphene structure on surface of to-be-processed substrate.

IFUKU R, MATSUMOTO T, SUGIURA M, RYOTA I, TAKASHI M, MASAHITO S

Method for manufacturing graphene for coating cantilever used in scanning probe microscope, involves generating surface wave plasma of source gas by microwave excitation to directly form graphene film on substrate without using catalyst.

BSHWAKARMA L, ADHIKARI S, SBASHI S, UMENO M, MABUCHI Y

Chemical doping of graphene film involves irradiating laser to graphene film immersed in melt containing metallic compound dissolved in solvent.

AMUR A, UMENO M

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J