国家/地区 日本（16）
IPC部 C（16）
IPC大类 C01（16） H01（7） B32（6）
B82（6） B01（5） B05（4）
D01（3） C09（2） C23（2）
C30（2）
IPC小类 C01B（16）
IPC C01B031/02（12） C01B031/04（9） C01B031/00（5）
B82Y030/00（4） B01J021/18（3） B05D003/02（3）
B82B003/00（3） D01F009/12（3） H01L029/06（3）
B01J023/42（2） B01J023/755（2） B05D001/36（2）
B05D003/10（2） B05D005/00（2） B32B009/00（2）
发明人 CHOI J（3） CHOI J Y（3） IN Z（3）
SHIN H（3） SHIN H J（3） YOON S（3）
YOON S M（3）
公开年 2009（8） 2010（6） 2008（2）
申请年 2008（16）
专利权人 SAMSUNG ELEC.（3） DOKURITSU GY.（2） NEC CORP（2）

Platinum cluster used as highly active catalyst for electrode used for capacitor and fuel cell, comprises platinum particles with particle diameter of below specified value supported by carbon material containing graphene.

AKITA T, HOMMA I, KAYAMA M, NAKAMURA J, OKAZAKI K, YU E J, HONMA I

Semiconductor device for liquid crystal display, includes transparent substrate having graphene film, graphite film, or amorphous carbon film such that carbon film is transferred to substrate from carbon material substrate by laser beam.

HIURA H, KANAYAMA T, TADA T

Manufacturing carbon nanotube-, fullerene- and/or graphene-containing coating for use as electromechanical component or lead frame, involves applying carbon nano-tubes, fullerene or graphene on tin-containing coating by mechanical treatment.

ADLER U, BURESCH I, PRIGGEMEYER S, RODE D, SCHMIDT H, ROHDE D

Controlled growth of graphene film comprises preparing substrate of metal layer having phase diagram with carbon on surface to obtain homogeneous solid solution, exposing layer to controlled flow e.g. carbon atoms and changing the phase.

BARATON L, COJOCARU C S, PRIBAT D, COJOCARU C

Hydrogen-gas occlusion graphene used for manufacturing hydrogen gas, is obtained by carrying out chemical adsorption of hydrogen molecule to graphene surface.

KAWASHIMA Y

Graphene nanostructure fabricating method for semiconductor device, involves performing anisotropic etching by using aligned oxide nanostructure as mask, and removing remaining oxide nanostructure after anisotropic etching.

HONG S, KIM T H, LEE J, HONG S H, LEE C Y, KIM T

Method for processing graphene sheet type-material used for semiconductor integrated circuit device, involves irradiating vacuum UV rays to surface of graphene sheet-type material to remove or modify outermost surface layer of material.

ASANO T

Assembling area of first surface with area of second surface/molecule, useful for exfoliating graphene sheets, comprises contacting the area of first surface with the area of second surface or with the molecule.

BERTHELOT T, HUC V, LE XUAN T, ROUSSEL S, VIEL P, DENIAU G, LE X T, NEKELSON F, ROUSSELL S, TOMASEU B, GI D, BAENGSANG W, SSUAN TTUAN R, PABIENG N, SEBASEUTIENG R, LE X

Graphene board has support comprising graphene, and adhesive layer adhered to graphene of support.

MITSUOKA Y, OSHIMA H

High-conductive carbon fiber for manufacturing filament for cable used for power transmission, has multilayer graphene structure in which the graphene separated mutually is joined on the surface.

FUJITA J