国家/地区 台湾（5）
IPC部 C（5） H（4） B（3）
IPC大类 C01（5） B01（3） C23（3）
H01（3） H05（2）
IPC小类 C01B（5）
IPC C01B031/02（2） C01B031/04（2） C01B032/182（2）
C23C016/26（2） C23C016/511（2）
发明人 MATSUMOTO T（3） MATSUMOTO TAKASHI（2）
公开年 2013（2）
申请年
专利权人 TOKYO ELECTRON LTD（5）

Upper electrode assembly used in plasma processing apparatus, has heat transfer sheet that is mounted between electrode plate and metal plate and having vertically oriented portion with vertically oriented graphene structures.

TSUJIMOTO H, KOBUNE T, LI L, LEE L, KOBUNEDAKAKI

Semiconductor device e.g. monolithic three-dimensional integrated circuit, has microelectronic components embedded in single crystalline dielectric material, where material contains carbon with diamond structure or hexagonal boron nitride.

CLARK R D, CLARK R

Manufacture of graphene structure used for wiring, involves preparing substrate to be processed, and forming graphene structure on substrate surface by plasma chemical vapor deposition using plasma of process gas containing oxidizing gas.

RYOTA I, TAKASHI M, IFUKU R, MATSUMOTO T

Processing of graphene used for manufacture of graphene nanoribbons, involves irradiating ion beam to graphene using gas cluster ion beam apparatus, forming cluster and etching.

MATSUMOTO TAKASHI, MATSUMOTO T

Pre-processing method of catalyst metal layer during formation of graphene, involves activating catalyst metal layer by applying plasma of process gas containing reducible gas and nitrogen-containing gas to catalyst metal layer.

MATSUMOTO TAKASHI, MATSUMOTO T