国家/地区 台湾（216）
IPC部 C（216）
IPC大类 C01（216）
IPC小类 C01B（216）
IPC C01B031/04（114） C01B031/02（82） B82Y030/00（67）
C01B032/182（66） B82Y040/00（64） H01M004/62（49）
C01B032/194（38） H01B001/04（37） H01M004/583（34）
H01M004/36（33） C23C016/26（31） C01B032/15（28）
C01B032/184（28） H01M004/133（27） H01L021/02（26）
发明人 TAMAKI E（13） MUELLEN K（11） MULLEN K（9）
SCHWAB M G（9） FENG X（8） NOMOTO K（7）
FAN S（6） KUBOTA Y（6） SUN P（6）
WANG J（6） WU Z（6） GUINEY I（5）
HUANG J（5） KAWASAKI M（5） LEE J（5）
公开年 2015（28） 2022（28） 2021（27） 2013（25） 2014（22） 2017（20） 2012（17） 2016（12） 2011（11） 2018（11） 2019（7） 2010（5） 2023（2）
申请年 2013（27）  2021（27）  2014（24）  2012（23）  2015（22）  2020（16）  2011（15）  2016（13）  2017（10）  2009（9）  2022（9）  2018（8）  2010（6）  2019（6） 
专利权人 BASF SE（13） TORAY IND IN.（13） MAX PLANCK G.（12） HON HAI PREC.（10）
SEMICONDUCTO.（10） UNIV TSINGHU.（10） HONGFUJIN PR.（9） BASF CHINA C.（6）
SEKISUI CHEM.（6） TAIWAN SEMIC.（6） APPLIED MATE.（5） DOKURITSU GY.（5）
GUARDIAN IND.（5） NAT INST ADV.（5） PARAGRAF LTD（5） TORAY ADVANC.（5）
GUARDIAN GLA.（4） GUARDIAN IND（4） IND TECHNOLO.（4） SUNG C（4）

Disposable sensing element for monitoring hydrogen peroxide, has reduced graphene oxide layer that is formed on working surface of working electrode and counter electrode.

LAN C

Process used for purification of graphite material, involves subjecting graphite material to oxidizing conditions, subjecting metal sulfide-lean graphite material to carbochlorination, and purging metal chlorides from metal chloride-rich graphite material, thus obtains purified graphite material.

BOISVERT R, BOULANGER P, BRASSARD M, DESAULNIERS E, NORVAL G, RIECKMANN P, TAN A, TAN Z

Transistor for semiconductor device, has channel layer that comprises graphene layer and hexagonal boron nitride sheets dispersed in graphene layer and arrangement directions of hexagonal boron nitride sheets that are aligned and source/drain region next to gate stack that is obtained.

CHEN Z, CHU Z, CHEN T, CHUU C

Graphene flake for regulating zero-point potential energy, has multi-component material surface charge modulation layer that is combined on surface of target object to modulate mesopotential of target surface.

CHANG C, TSENG I, SU Y

Upper electrode assembly used in plasma processing apparatus, has heat transfer sheet that is mounted between electrode plate and metal plate and having vertically oriented portion with vertically oriented graphene structures.

TSUJIMOTO H, KOBUNE T, LI L, LEE L, KOBUNEDAKAKI

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Transferring one or more nanostructures from one substrate to another substrate by applying coating of crosslinkable copolymer over one or more nanostructures on surface of substrate, heating, transferring nanostructures and copolymer onto another substrate surface, and removing copolymer.

ARNOLD M S, JACOBBERGER R M, GOPALAN P, DWYER J H

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Producing photoluminescence material involves placing plastic piece into working solution which is water, applying micro-plasma onto surface of the working solution, and degrading the plastic piece into multiple smaller molecular and graphene quantum dot.

CHIANG W, WENG R, WENG R J

Integrated chip comprises substrate, first conductive component above substrate and second conductive component, upper portion of substrate and transversely adjacent to first conductive component where concave hole transversely separating first conductive component and second conductive component.

SUI X, LI M, CHUNG C, LU M, YANG S, SHUE S, LEE M