国家/地区 美国（44）
IPC部 C（44）
IPC大类 C01（44）
IPC小类 C01B（44）
IPC C01B031/02（35） B82Y040/00（34） C01B031/04（29）
B82Y030/00（28） C23C016/26（27） H01B001/04（13）
B82B003/00（8） B32B009/00（7） C23C016/02（7）
B32B009/04（6） C23C016/56（6） C01B032/186（5）
C23F001/02（5） H01B013/00（5） B05D005/12（4）
发明人 HONG B H（7） AHN J（5） FAN F Y（5）
FAN S（5） JIANG K（5） LIN X（5）
XIAO L（5） AHN J H（4） LIN X Y（4）
BAE S K（3） HONG B（3） JUNG M H（3）
LEE S（3） BAE S（2） CHO S（2）
公开年 2012（26） 2011（11） 2013（7）
申请年 2011（44）
专利权人 UNIV SUNGKYU.（6） HON HAI PREC.（5） HONGFUJIN PR.（5） UNIV TSINGHU.（5）
SAMSUNG ELEC.（4） SAMSUNG TECH.（4） UNIV SUNGKYU.（4） EMPIRE TECHN.（3）
GRAPHENE SQU.（3） HANWHA TECHW.（3） INT BUSINESS.（3） CENT NAT REC.（2）
CHINESE ACAD.（2） COMMISSARIAT.（2） KOREA ADV IN.（2） SHANGHAI INS.（2）
UNIV SUNGKYU.（2）

Formation of patterned graphene layer on substrate used for low-noise amplifier, involves forming patterned structure(s) of carbide-forming metal or metal-containing alloy on substrate, applying layer of graphene and heating.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K, AFZALIARDAKANI A C O I

Manufacturing film of graphene, comprises depositing metal layer on surface of substrate, and continuously realizing buried carbon rich area inside metal layer by creating and maintaining carbon rich area so as to form film of graphene.

COJOCARU C

Synthesizing graphene sheet on platinum silicide, by forming stack by e.g. placing first layer of diffusion barrier material on substrate and placing second layer of silicon carbonaceous material on first layer and thermally treating stack.

ZENASNI A

Apparatus for synthesizing graphene film on copper foil, has quasi enclosed substrate holder including open side, and cap placed over open side, where substrate is located inside holder for graphene film synthesis.

BOI A A, LI X, BOL A A

Apparatus for growing carbon nanostructure i.e. graphene, on fiber for current carbon nanotube synthesis technique, has substrate inlet sized before growth zones to allow spoolable length substrate to pass through growth zones.

MALECKI H C, DAHNE J L, LOEBACH J P, GAIGLER R L, LEDFORD J T, MALECKI H, DAHNE J, LOEBACH J, GAIGLER R, LEDFORD J

Partially altering defect area in layer on substrate, comprises receiving the layer including graphene and some defect areas in graphene, and exposing the layer to gas including hydrogen, boron, aluminum, gallium, indium and/or thallium.

MILLER S, MILLER S A

Stable graphene film for graphene transparent electrode for touch screen, comprises graphene film and conductive protective film.

AHN J H, HONG B H, YAN C, AHN J

Making graphene/carbon nanotube composite structure, comprises growing graphene film on surface of metal substrate by chemical vapor deposition method, cooling metal substrate, and providing carbon nanotube film structure on graphene film.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making a graphene or carbon nanotube composite structure, comprises e.g. growing graphene film on first surface of metal substrate by chemical vapor deposition method, and combining carbon nanotube film structure with graphene film.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making a graphene composite structure used as electrode involves growing a graphene film on the first surface of the metal substrate by a chemical vapor deposition method; and etching the metal substrate from the second surface.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y