国家/地区 美国（3） 世界知识产权组织（3） 中国（2）
IPC部 B（5）
IPC大类 B82（5）
IPC小类 B82Y（5）
IPC B82Y030/00（5）
发明人
公开年 2021（5）
申请年 2020（2）  2021（2） 
专利权人

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F

Preparing carbon-magnesium oxide nano composite powder useful in preparing refractory material comprises using raw material magnesium citrate, which is prepared by low-temperature pretreatment and medium temperature sintering successively.

XIAO G, LUO J, DING D, ZHONG X

Manufacture of silicon carbide material for forming e.g. ceramic matrix composite, involves reacting carbon material and silicon-containing gas in reaction chamber at preset temperature and pressure, and maintaining partial pressure.

GRIFFITH G W, GARNIER J E

Producing graphene oxide and reduced graphene oxide nanostructured materials used as raw material or nanofiller in chemical technical applications, involves selecting and preparing equipment and reagents.

HERNANDEZ SANCHEZ D, MATA CRUZ I