国家/地区 中国（4） 美国（3） 世界知识产权组织（2）
IPC部 C（6）
IPC大类 C07（6）
IPC小类 C07D（6）
IPC C01B031/02（3） B82Y030/00（2） B82Y040/00（2）
C01B031/04（2） C07D487/22（2） C25B001/00（2）
C25B011/04（2）
发明人
公开年 2021（2）
申请年 2021（2） 
专利权人

New carbazole derived electro-crosslinkable n-type organic semiconductor for use in electronic device, such as organic thin film transistors, organic solar cells, organic photosensitive diodes, organic photosensitive transistors, organic light emitting diodes, and quantum well diodes.

HUANG F, YANG X, YU G, ZHONG Z

New triphenylamine-based cobalt porphyrin catalyst useful in preparing carbon material-supported triphenylamine-based cobalt porphyrin composite catalyst for electrocatalytic oxygen reduction to produce hydrogen peroxide.

ZHAO L, XU Q, MA Y, YUAN R

Graphene phthalocyanine composite material useful in electrochemical catalytic reduction of carbon dioxide and photocatalytic degradation of hexavalent chromium ions.

XU J, XU Z, QI F, LI M

Manufacturing graphene used in field effect transistor, supercapacitor, hydrogen generation or storage, solar cell, photocatalyst and biosensor, comprises forming the graphene by unzipping doped carbon materials by an external stimulus.

KIM S O, LEE H J, LIM J, KIM S

Material useful for preparing chromatography column for isolating protein from sample, and for preparing graphene oxide, comprises a graphene derivative comprising a graphene core and a first pendant group.

CHHOWALLA M, VITTADELLO M, WORONOWICZ K, FALKOWSKI P G, HARROLD J W, HARROLD J

Modified graphene comprising sp3 orbital, useful in e.g. spintronics device, magneto-electronic device, wafer, ferromagnetic semiconductor, and field effect transistor, and as room temperature ferromagnetic semiconductor.

BEKYAROVA E, HADDON R C, HONG J, ITKIS M E, KHIZROEV S, RAMESH P