国家/地区 中国（5）
IPC部 C（5）
IPC大类 C21（5） C22（5） C23（3）
C01（2） C30（2）
IPC小类 C21D（5）
IPC C21D009/46（5）
发明人 WANG X（3） LI J（2）
公开年 2021（2） 2022（2）
申请年 2021（2）  2022（2） 
专利权人

Method for preparing metal-graphene composite material by using electronic component, involves preparing metal-graphene composite material by hot-pressing sintering, and applying pulse current to metal substrate to perform surface heat treatment to metal substrate.

WANG X, HUO Y, LI J, CAO Z, XIAO Z

Preparing single crystal graphite comprises e.g. placing metal foil in plasma device, introducing nitrogen-containing gas, starting plasma excitation source for plasma treatment, placing metal foil in reaction furnace, annealing, starting growth of graphene single crystal at growth temperature.

ZHAO M, LI G, WANG B, WEI W, XU X, GUO Y, LI J, JIAN X, QUE L, ZHOU Z

Preparing nitrogen-doped graphene comprises taking ionic liquid as precursor, spin-coating ionic liquid on the annealed copper foil in argon/hydrogen atmosphere and preparing nitrogen-doped graphene by high-temperature thermal decomposition.

GUAN S, WANG X, LI S, PENG Y

Vertical graphene composite heat conducting copper foil comprises copper foil substrate layer adhered with two plane graphene layers at surface and bottom, where surfaces of plane graphene layers have vertical graphene layers.

ZHANG L, YE Q, WANG X, SHEN L

Preparation of single crystal copper substrate used for growing graphene by fixing quartz rod on spiral drive screw slide table, placing industrial copper foil on quartz rod, and sending quartz rod into quartz tube of deposition system.

WAN Q, GU Y, CHEN K