国家/地区 中国（4） 美国（4） 韩国（3） 世界知识产权组织（3）
IPC部 C（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C25B003/00（7）
发明人
公开年 2017（3）
申请年 2016（3）  2014（2） 
专利权人

Manufacturing a graphene by dipping cathode including metal and anode including graphite into electrolyte, and applying direct current (DC) power supply between cathode and anode where the DC power supply is DC switching power supply.

LEE W, LIM S, HAN J H, WONOHLEE, LIM S M, HAHN J H

Surface processing method for graphene substrate of e.g. organic LED used in electronic device, involves forming organic material on one portion of graphene and surface-processing and forming dielectric thin film on organic material.

JAE Y B, SE J K, HYUN J S

Producing isolated graphene sheets from layered graphite material having hexagonal carbon atomic interlayers with interlayer spacing, comprises e.g. forming alkali metal ion-intercalated graphite by electrochemical intercalation procedure.

ZHAMU A, JANG B Z

Bioelectrochemical system used for producing graphene oxide, has biochemical reactor having anode(s), cathode(s), transmission line(s), direct current electricity source(s), microbial population and graphene oxide collector.

FALLGREN P, JIN K, JIN S, LI R, FUGREEN P

Preparing electrochromatic material involves dispersing carboxyl group graphene in dimethyl formamide in water bath under ultrasonic dispersion in protection of inert gas.

XU K, WU X, ZHANG W

Preparation device of graphite oxide/polypyrrole layer thin film comprises electrolyte container containing pyrrole monomer and sodium perchlorate mixed solution, graphene strip thin film, molybdenum, reference electrode and power source.

LI P

Modified graphene comprising sp3 orbital, useful in e.g. spintronics device, magneto-electronic device, wafer, ferromagnetic semiconductor, and field effect transistor, and as room temperature ferromagnetic semiconductor.

BEKYAROVA E, HADDON R C, HONG J, ITKIS M E, KHIZROEV S, RAMESH P