国家/地区 美国（6） 中国（5） 世界知识产权组织（3） 日本（2） 韩国（2）
IPC部 C（8）
IPC大类 C01（8）
IPC小类 C01B（8）
IPC C01B032/186（8）
发明人
公开年 2017（3）
申请年 2017（3） 
专利权人

Multilayer electrically conductive wire for use in aeronautics field to lighten airplane, has central support core, set of pairs of layers around central support core comprising intercalary layer made of non-carbon based material and graphene layer, and first layer arranged on outer surface.

LEKARSKI K

Preparing graphene nanowire film useful for thin film transistor array, comprises e.g. preparing anodized aluminum oxide template, depositing metal catalyst layer, dispersing in film forming solution, applying membrane liquid and drying.

XIA Y, ZHUO E

Preparing large size and high quality graphene based on self-limiting nucleation growth comprises e.g. polishing the copper foil, depositing and covering with nickel metal, adding the covered nickel metal copper foil into growth chamber.

ZHANG A, YANG M, CHEN J, ZHAO Y, WEI W, ZHANG X

Manufacture of graphene pellets used in e.g. electrode, involves forming nickel pellets from nickel powder, exposing nickel pellets to hydrocarbon, and etching nickel using graphene with acid resulting in graphene pellet.

ALVAREZ N, DEARMOND D, MALIK R, SHANOV V N, ZHANG L

Production of graphene film used in nanoelectronics, involves forming catalyst film on conductive support, forming graphene film on catalyst film, and electrolytically removing catalyst film from support.

BOTTE G G

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Method of manufacturing graphene layer on substrate, involves laminating metalized graphene layer to second substrate.

LIPOMI D J, ZARETSKI A, LIPOMI D

Method for manufacturing electrical conductor, involves depositing boundary cappings on defects of graphene layer to inhibit corrosion of the substrate layer at defects and depositing boundary capping material on substrate layer.

LIU Z, ZHENG M, MARTENS R I, MARTENS R