国家/地区 中国（5）
IPC部 C（5）
IPC大类 C30（5） C23（2）
IPC小类 C30B（5）
IPC C30B029/02（4） C30B025/18（2）
发明人 ZHANG H（5）
公开年 2015（3）
申请年 2014（2）  2015（2） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（5）

Dry cleaning of copper substrate for preparing chemical vapor deposited graphene, involves subjecting copper substrate to aerobic atmosphere for oxidation to form oxide layer and removing oxide layer from surface of substrate.

ZHANG Y, YU G, GE X, ZHANG H, CHEN Z, SUI Y, DENG R

Flexible metal substrate device for growing graphene thin film, has reflective plate that is located on outer peripheral side of heater for reflecting heat chamber in inward direction.

CHEN Z, HU B, WU H, WU K, XU W, ZHANG H, ZHANG Y, XI M, YU G

Preparing graphene single crystal involves preparing cuprous oxide film on the surface of the substrate to obtain graphene single crystal having low nucleation density.

CHEN Z, SUI Y, ZHANG H, ZHANG Y, YU G

Selection of qualified region of chemical vapor deposited graphene film during fabrication of microelectronics, involves heating chemical vapor deposited graphene film formed on metal substrate using reaction gas, and removing defect.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G

Chemical vapor deposition of single crystal used for increasing graphene domain size, by heating substrate in chemical vapor deposition device, passing under inert gas into carbon-containing gas, reacting and cooling to room temperature.

CHEN Z, WANG B, YU G, ZHANG H, ZHANG Y