国家/地区 中国（10）
IPC部 C（10）
IPC大类 C23（10） C30（10） C01（5）
B82（3） H01（2）
IPC小类 C23C（10）
IPC C23C016/26（10）
发明人 DENG P（4） GUO H（4） LEI T（4）
ZHANG K（4） ZHANG Y（4） BI H（2）
DING G（2） HUANG F（2） LIN T（2）
LV J（2） XIE X（2）
公开年 2012（9）
申请年 2012（10）
专利权人 UNIV XIDIAN（5） CHINESE ACAD.（2） CHINESE ACAD.（2）

Direct epitaxial method of graphene by chemical vapor deposition using II-VI semiconductor zinc oxide substrate where graphene-zinc oxide composite is used for piezoelectric device comprises pre-processing substrate and growing graphene.

ZHANG J, HAN D, NING J, HAO Y, CHAI Z, WANG D, YAN Y

Controllable layer number graphene thin film, prepared by preparing germanium-silicon substrate, carburizing and heating copper-nickel composite substrate with carbon source gas.

DING G, JIANG M, XIE X, ZHU Y

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X

Three-dimensional graphene tube for use in e.g. solar cell, has diameter and length, in preset range, and has preset number of layers.

BI H, HUANG F, LIN T

Preparation of large-area graphene used for sealing gas or liquid, by vacuumizing cleaned silicon substrate in chemical vapor deposition system in presence of hydrogen, carbonizing, introducing propane to form carbide layer, and heating.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Three-dimensional graphene/metal line or metal wire composite structure for solar cell and storage battery, is formed by growing graphene on outer surface of metal line by coating carbon source using chemical vapor deposition method.

BI H, HUANG F, LIN T

Formation of graphene on 3C-silicon carbide substrate involves carbonizing silicon substrate, forming carbon film, carrying out heteroepitaxial film growth, reducing, reacting with carbon tetrachloride, and annealing.

DENG P, GUO H, LEI T, LV J, ZHANG K, ZHANG Y

Device for quick and continuous preparation of graphene film with a large size has heat source, roll-to-roll unit, and gas bottle, where roll-to-roll unit drives catalytic metal thin layer to move, and crosses airtight quartz box.

LI C, WANG Z

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Manufacture of large-area graphene used for sealing gas and liquid, involves adding hetero-epitaxy film to quartz tube, heating, adding mixed gas of argon and chlorine, generating carbon layer, and annealing.

DENG P, GUO H, LEI T, LV J, ZHANG K, ZHANG Y