国家/地区 中国（6）
IPC部 C（6）
IPC大类 C30（6） C23（2） H01（2）
IPC小类 C30B（6）
IPC C30B025/18（6）
发明人 WANG Y（6）
公开年 2022（3）
申请年 2021（4） 
专利权人 CHINESE ACAD.（2）

Preparation method of a large domain graphene single crystal, involves annealing sapphire/metal substrate with oxygen-containing gas and providing growth gas according to mode of increasing proportion gradient of growth gas, and growing on sapphire/metal substrate to obtain graphene single crystal.

LIU Z, PENG H, CAO Y, WANG Y, DU Y, TANG J, YAN R

Method for remote epitaxial growth of nitride single crystal thin film based on ferroelectric material substrate comprising adjusting temperature of ferroelectric material substrate, and cooling ferroelectric material substrate.

XU K, WANG J, WANG Y, XU Y, QU Y

Preparing indium-phosphate thin film based on gallium-arsenic substrate, comprises e.g. growing gallium-arsenic buffer layer on gallium-arsenic substrate, preparing composite buffer layer on gallium-arsenic buffer layer, forming composite buffer layer and growing indium-phosphate thin film.

JI H, LUO S, WANG Y, XU P

Preparing silicon nitride single crystal involves providing silicon carbide substrate, and disposing multilayer graphene an insertion layer on silicon carbide substrate to obtain graphene/silicon carbide substrate.

WANG Y, XU Y, WANG J, XU K

Preparing two-dimensional crystalline thin film layer of palladium diselenide involves using silicon carbide as substrate having graphene layer on surface of silicon carbide and maintaining temperature of substrate to growth temperature.

LI E, WANG D, FAN P, WANG Y, GAO H

Method for epitaxially growing graphene on silicon carbide wafer involves processing silicon carbide wafer with hydrogen and silane to remove oxide produced on wafer surface, and supplying argon.

LEI T, WANG D, TANG X, LEI J, WANG Y, ZHANG Y, WANG H