国家/地区 中国（11）
IPC部 C（12）
IPC大类 C30（12） C23（5） H01（4）
IPC小类 C30B（12）
IPC C30B028/14（12）
发明人 HAO Y（2） MA P（2） NING J（2）
SUN H（2） WANG D（2） ZHANG J（2）
公开年 2022（5） 2021（4）
申请年 2021（5）  2020（2）  2022（2） 
专利权人 SUN H（2） UNIV XIDIAN（2）

Preparing metal/graphene/polycrystalline diamond film particle detector used in field of nuclear physics, comprises depositing layer of graphene on surface of patterned metal substrate as ohmic contact electrode layer and growing diamond film in situ on graphene, where metal substrate is copper foil.

XIONG Y, WANG B

Epitaxial gallium nitride (GaN) with diamond as substrate comprises diamond substrate, single-layer or multi-layer graphene layer arranged on diamond substrate, aluminum nitride layer sputtered on graphene layer, and gallium nitride thin film epitaxially grown on aluminum nitride.

LI X, ZHANG F

Preparation of gallium nitride epitaxial structure by providing a silicon carbide substrate, pre-processing, growing a graphene film, growing diamond film, growing aluminum nitride polycrystalline film, and annealing.

PAN Y, FENG H, TANG J

Transferring gallium oxide epitaxial layer based on van der Waals film comprises e.g. using chemical vapor deposition to make polycrystalline continuous graphene film, extending gallium oxide on graphene film and adhering thermal release adhesive tape to gallium oxide epitaxial layer upper surface.

HAO Y, MA P, ZHANG J, WANG D, CHEN D, NING J

Preparing transferable large size gallium oxide film involves growing graphene on the copper foil substrate, and then removing copper foil substrate, removing graphene of the copper foil substrate transferred to cleaned sapphire substrate.

HAO Y, MA P, JIAO P, WANG D, ZHANG J, FENG Q, ZHANG Y, NING J

Elastic air-tight piece comprises elastic air-tight piece set at outlet end of preparation chamber and hermetically connected with outlet end of preparation chamber, where elastic air-tight piece is provided with conveying belt assembly.

SUN H

Preparation chamber of scale preparation device of CVD deposited graphene, has main chamber outlet end and auxiliary chamber inlet end located below liquid level of liquid airtight tank, auxiliary chamber includes elastic airtight component.

SUN H

Preparing structure having transition metal sulfide film, involves providing substrate, forming graphene layer on surface of substrate, and forming transition metal sulfide thin film on surface of graphene layer.

NI J, HUANG W, XUE C

Epitaxially growing graphene on silicon carbide substrate comprises adding silicon carbide substrate on graphite plate, placing crucible in heating furnace, heating and forming graphene layer on surface of silicon carbide substrate.

LI S, LIU Y, FENG L, QIN L

Preparation of single layer polycrystalline graphene film used for e.g. nano-electronic device, involves annealing metal substrate, changing growth atmosphere, introducing carbon source gas and adjusting grain size of graphene film.

REN W, MA T, CHENG H