国家/地区 中国（2） 韩国（2）
IPC部 C（5）
IPC大类 C30（5）
IPC小类 C30B（5）
IPC C30B029/40（5）
发明人
公开年 2020（2） 2021（2）
申请年 2019（5）
专利权人

Phonovoltaic cell used as part of phonovoltaic pile of contiguous phonovoltaic cell comprises first and second conductor layer, first boron layer in contact with the first conductor layer, second boron layer in contact with the second boron layer.

CURRAN P

Manufacture of semiconductor substrate structure involves preparing intermediate structure by forming graphene layer on diamond wafer substrate, forming hexagonal-boron nitride layer on structure and forming gallium nitride epilayer.

LEE T, CHO S

Composite seed crystal useful for aluminum nitride single crystal growth comprises aluminum nitride ceramic substrate, graphene thin layer on aluminum nitride ceramic substrate and aluminum nitride thin film on graphene thin layer.

GUO L, HU W, WANG W, CHEN X

Producing hexagonal boron nitride thin film useful for photoelectric device, light-emitting and light-receiving device, comprises forming hexagonal boron nitride thin film on graphene oxide layer by supplying e.g. boron-containing precursor.

KO K B, YOO B, HAN M, TRANVEITCUONG, HONG C

Growing large mismatched indium gallium arsenide material involves covering layers of graphene on mismatched substrate, placing in growth chamber of gaseous source molecular beam epitaxy system, introducing arsine and pyrolyzing.

GU Y, WANG H, ZHANG Y, SHAO X, LI X, GONG H