国家/地区 中国（5）
IPC部 C（6）
IPC大类 C30（6）
IPC小类 C30B（6）
IPC C30B025/00（6）
发明人 LI Y（3） SUN L（2）
公开年 2021（6）
申请年 2021（4）  2020（2） 
专利权人

Preparing two-dimensional compound semiconductor thin film useful in micro-nano electronic device, comprises placing insulating substrate with single-layer two-dimensional layered material/metal oxide film vertical heterostructure on surface in heating device, and introducing carrier gas.

SHI Z, ZHANG C, ZHU H, WU T, GAO B

Preparing single crystal graphene, comprises preparing single crystal graphene by chemical vapor deposition process, forming graphene nucleus on the substrate, and forming single crystal graphene on basis of graphene core.

WANG Y, LI Y, SUN L, LIU H, LIU Z

Growing single-layer single-crystal graphene based on copper (I) oxide dielectric layer, comprises polishing and cleaning the copper foil, introducing methane, heating and naturally cooling.

ZHAO X, LI Y, WANG P, SUN L, GUO X, ZHANG X, YU F

Three-dimensional carbon-metal composite material e.g. as electromagnetic wave shielding material in energy storage system, comprises metal micropowder positioned in multiple of pores of carbon-based foam.

LEE S H, RHO H K, RYU H S

Preparation method of single crystal graphene conductive ink involves obtaining predetermined amount of single crystal graphene, and preparing ink based on predetermined amount of single crystal graphene.

CHEN J, LIU W

Implementing airflow-free MPCVD single crystal diamond growth using a solid carbon source involves ultrasonic cleaning of diamond seed crystals with acetone, deionized water and absolute ethanol in sequence to obtain seed crystals.

ZHU J, LI Y, DAI B, HAO X, ZHAO J, ZHANG S