国家/地区 中国（3） 美国（3） 欧洲专利局（EPO）（2） 韩国（2） 世界知识产权组织（2）
IPC部 C（5）
IPC大类 C30（5）
IPC小类 C30B（5）
IPC C30B025/18（5）
发明人
公开年 2017（5）
申请年 2016（3）  2017（2） 
专利权人

Graphene-based LED epitaxial growth method, involves depositing silicon-doped n-type gallium nitride layer, active layer, p-type aluminum gallium nitride layer and magnesium-doped gallium nitride layer on substrate, and cooling.

XU P

Growing of gallium nitride based on atomic layer deposition of aluminum nitride comprises e.g. cleaning copper substrate, growing graphene layer, aluminum nitride thin layer by atomic layer deposition process and post processing.

WANG W, LI Z, LONG H, LI M, ZHANG J

Formation of multilayer structure, involves epitaxially depositing graphene layer on layer comprising cobalt that is in contact with dielectric layer and has semiconductor wafer with front wafer surface contacting dielectric layer.

BERRY V, BEHURA S, NGUYEN P, SEACRIST M R

Transfer-free method for forming high-quality graphene layer on graphene electrode, involves depositing titanium layer on base substrate by sputtering process, and growing graphene on deposited layer by chemical vapor deposition process.

YOON S, PARK B, YOON S G, PARK B J

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J