国家/地区 美国（7） 中国（6） 世界知识产权组织（4） 韩国（3） 欧洲专利局（EPO）（2） 日本（2）
IPC部 C（10）
IPC大类 C30（10）
IPC小类 C30B（10）
IPC C30B029/02（6） C01B031/04（4） C23C016/26（4）
C30B025/18（4） B82Y030/00（3） B82Y040/00（3）
H01L021/02（3） B22F001/00（2） B22F009/24（2）
C23C016/02（2） C23C016/44（2） C23C016/46（2）
C30B025/02（2） C30B029/52（2） C30B029/60（2）
发明人 MA S（2） MA T（2） PAN G（2）
SUN G（2）
公开年 2014（5） 2015（5）
申请年 2014（10）
专利权人 UNIV BEIJING.（2） UNIV BEIJING.（2）

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Method for preparing liquid copper substrate utilized for preparing large single crystal graphene in field effect transistor device, involves placing solid copper on copper-tungsten alloy substrate, and heating in hydrogen atmosphere.

LIU Y, WU B, WANG L, YU G, CHEN J

Composition for electrode used for battery comprises carbonaceous material consisting of graphene and reduced graphene oxide and sodium ions.

SINGH G, DAVID L

Formation of graphene-boron nitride interface used in e.g. formation of graphene-boron nitride heterostructure, involves exposing ruthenium substrate to ethylene, and sequentially exposing resultant substrate to oxygen and borazine.

SUTTER P W, SUTTER E A

Large-surface-area single-crystal monolayer graphene material for e.g. transparent electrode, has graphene layer arranged on flat board or catalytic layer, where catalytic layer is arranged on crystal plane that is arranged on substrate.

PARK H B, KIM H, YOON H W, PARK S M, LEE M Y, HO B P, HEE W Y, SUN M P, YONG L M, LEE M, PARK H, PARK S, YOON H

Method for growing graphene layer on metal foil for e.g. forming field-effect transistor, involves positioning foil in vessel placed in chamber, introducing hydrogen, annealing foil, introducing methane and depositing carbon on foil.

ZHOU C, ZHANG Y, ZHANG L

Functionalizing epitaxial graphene sample surface for atomic layer deposition of dielectric in reactor, involves subjecting sample to ex situ functionalization step and sample having hydroxyl-terminated surface to in situ treatment cycle.

GARCES N, WHEELER V D, GASKILL D K, EDDY C R, JERNIGAN G G

Cubic phase cobalt/graphene composite material used as absorbing material, has monocrystalline structure, and comprises metal cobalt as face-centered cubic structure, and graphene as sheet-shaped structure.

MA S, MA T, PAN G, SUN G

Hexagonal phase cobalt-graphene polycrystalline composite material used as shielding material has stacked closely-packed cobalt and graphite sheets.

MA S, MA T, PAN G, SUN G