国家/地区 中国（8） 美国（5） 世界知识产权组织（4）
IPC部 C（11）
IPC大类 C30（11）
IPC小类 C30B（11）
IPC C30B029/02（5） C01B031/02（3） C01B031/04（3）
C23C016/26（3） B82Y040/00（2） C23C016/02（2）
C23C016/458（2） C30B025/02（2） C30B025/12（2）
C30B025/18（2） C30B029/64（2）
发明人 JIN H（2） PENG P（2）
公开年 2012（11）
申请年 2011（11）
专利权人 PENG P（2）

Buffer layer of epitaxial gallium nitride grapheme structure for light emitting diode, comprises silicon carbide substrate; graphene-containing layer as buffer layer and gallium nitride epitaxial layer; and nitride layer.

LI S, QU S, SHAO H, XU X, WANG C

Forming single-layer graphene film by replacing portion of air in a reactor having a substrate with a buffer gas, flowing the buffer gas through the reactor and then heating the reactor, and passing the buffer gas through liquid precursors.

RADHAKRISHNAN G, ADAMS P M

Graphene thin film for bracket, has winding structure that is provided with inner surface, opposite outer surface, inner and outer edges.

JIN H, PENG P

Bracket for growing graphene, has inner edge and outer edge which are wound more than circle to form structure more than one layer.

JIN H, PENG P

Producing graphene, comprises fixing seed crystal to support substrate, providing feedstock adjacent to seed crystal about the location, and applying laser beam to heat portion of seed crystal and portion of feedstock.

HAUCK J P

Method for epitaxially growing graphene on silicon carbide wafer involves processing silicon carbide wafer with hydrogen and silane to remove oxide produced on wafer surface, and supplying argon.

LEI T, WANG D, TANG X, LEI J, WANG Y, ZHANG Y, WANG H

Producing an array of single-crystal graphene islands, to make e.g. transistor, comprises e.g. providing substrate, cleaning substrate surface, spin-coating poly(methyl methacrylate) layer on the surface, curing, and performing lithography.

YU Q, PEI S

Making high-quality graphene involves processing graphene substrate by reducing defect, placing precursor on substrate by transferring graphene sheet, precipitating/growing graphene with carbon tube and growing precursor into graphene strip.

GUO W, YIN J, ZHOU J

Method for preparing regular graphene single-crystal domain utilized for graphene apparatus, involves forming aromatic compound as regular graphene single-crystal domain on metal surface by molecule self-assembly technology.

CHEN X, LIU L, LIU S, WANG L

Vapor phase epitaxy carbon fiber assembly used as electrode material of lithium cell, is aggregate of vapor growth carbon fiber having tubular graphene layer structure, and average fiber outer diameter in preset range.

HITOE Y, SUZUKI J, SATO H, KAWASHIMA S, SUZUKI A