国家/地区 中国（16） 美国（11） 韩国（9） 世界知识产权组织（9） 日本（8） 欧洲专利局（EPO）（7） 加拿大（5） 印度（5） 台湾（2）
IPC部 C（27）
IPC大类 C30（27） C01（14） H01（12）
C23（7） B82（6） B01（4）
C04（4） H05（2）
IPC小类 C30B（27）
IPC C30B029/02（12） C30B025/18（7） C01B032/186（6）
B82Y040/00（5） H01L021/02（5） C30B029/38（4）
C30B029/60（4） C30B029/64（4） C01B032/188（3）
C23C016/02（3） C23C016/26（3） C30B001/02（3）
C30B025/02（3） C30B025/16（3） C30B029/40（3）
发明人 FIMLAND B M（2） LI Y（2） LIU Z（2）
MANCEVSKI V（2） MUNSHI M（2） SUN L（2）
VLADIMIR M（2） WANG Y（2） WEMAN H（2）
公开年 2021（27）
申请年 2020（27）
专利权人 CRAYONANO AS（2） UNIVERSAL MA.（2）

Manufacturing of graphene nanofibers from cotton sources, involves soaking cotton fiber and cotton rope in ethyl alcohol and isopropyl alcohol to develop rapid carbon skeleton and flexibility within graphene nanofibers, and placing alcohol.

PANDEY S, KARAKOTI M, DHALI S, KARKI N, SAHOO N G

Composition used for manufacturing composite polycrystalline diamond, comprises diamond particle(s), boron-doped diamond particle(s), and preset amount of additive containing boron oxide powder, and nano-carbon material.

CHEN W, PAN P, SUN Y

Preparing single crystal graphene, comprises preparing single crystal graphene by chemical vapor deposition process, forming graphene nucleus on the substrate, and forming single crystal graphene on basis of graphene core.

WANG Y, LI Y, SUN L, LIU H, LIU Z

Manufacturing semiconductor by forming mask layer which covers substrate, laminating graphene layer on surface of substrate, and making surface of graphene layer crystal-grow a semiconductor crystal.

NARUTSUKA S

Sp2-sp3 hybrid crystalline boron nitride has basic structural unit composed of sp2 hybridized graphite-like structural unit and sp3 hybridized diamond-like structural unit, where the two types of units are connected via coherent interface.

ZHAO Z, LUO K, SUN L, LIU B, HU W, HE J, YU D, TIAN Y, XU B, LIU Z, ZHAO Z S, HU W T, HE J L, YU D L, TIAN Y J, LIU Z Y

Method for transferring graphene onto a polymer substrate has given carrier for electronics.

GREBENKO A K, AITKULOVA A D, KRASNIKOV D V, NASIBULIN A G

Producing epitaxial structure useful in flexible electronic device comprises providing multilayer graphene layer having through-holes, providing single crystal substrate having graphene layer formed and growing semiconductor structure.

HONG Y, JUNG J S, JUNGJOONSUCK

Three-dimensional carbon-metal composite material e.g. as electromagnetic wave shielding material in energy storage system, comprises metal micropowder positioned in multiple of pores of carbon-based foam.

LEE S H, RHO H K, RYU H S

Coating metal workpiece e.g. electrical connector, involves exposing workpiece to carbon-containing precursor gas and hydrogen gas at preset flow rate and total gas pressure, and exposing to carbon-containing precursor gas and carrier gas.

ADAMS H J

Preparing ditelluride nanosheet comprises mixing and reacting metal ditelluride crystals, alkali metal salt and aprotic solvent to obtain intermediate inserted with alkali metal ions, and exfoliating with alkali metal ions in protic solvent.

WU C, PENG J, GUO Y, XIE Y