国家/地区 中国（5）
IPC部 C（5）
IPC大类 C30（5） H01（2）
IPC小类 C30B（5）
IPC C30B025/02（5）
发明人 ZHANG J（5）
公开年 2014（3）
申请年 2013（3） 
专利权人 UNIV XIDIAN（4）

Growing of large-sized monocrystalline graphene on silicon carbide substrate used for microelectronic device, involves polishing silicon carbide substrate, introducing e.g. argon, placing probe on substrate and growing graphene on substrate.

CHEN X, CHENG X, MA Q, SUN L, XU X, YANG Z, YU F, ZHANG J, ZHAO X

Epitaxial graphene growth and transfer on gallium nitride substrate by chemical vapor deposition and chemical etching involves placing silicon carbide substrate in metal organic chemical vapor deposition reactor and adding ammonia.

HAO Y, NING J, WANG D, ZHANG J, CHAI Z, HAN D, YAN Y

Epitaxial growth method of graphene thin film used for manufacturing graphene device, involves providing substrate into reaction chamber, introducing hydrogen, providing copper, processing, then introducing hydrogen and annealing.

WANG D, ZHANG J, NING J, HAO Y, CHAI Z, HAN D, YAN Y

Metal organic chemical vapor deposition reaction chamber, useful for growing graphene, comprises heating device fixed on bracket, and source inlet and exhaust port that are located at top plate and supporting plate, respectively.

WANG D, ZHANG J, NING J, HAO Y, CHAI Z, HAN D, YAN Y

Gallium nitride-based substrate, epitaxial graphene direct chemical vapor deposition growth comprises using III-V group compound semiconductor gallium nitride as substrate, pre-processing, and directly growing graphene.

CHAI Z, ZHANG J, HAN D, HAO Y, YAN Y, NING J, WANG D