国家/地区 中国（11）
IPC部 C（11）
IPC大类 C30（11） H01（4） C01（3）
C23（2）
IPC小类 C30B（11）
IPC C30B029/02（11）
发明人 CHAI Z（3） HAN D（3） HAO Y（3）
WANG D（3） YAN Y（3） ZHANG J（3）
NING J（2） WANG Z（2）
公开年 2014（11）
申请年 2013（6）  2014（3）  2012（2） 
专利权人 UNIV XIDIAN（3）

Large-surface-area single-crystal monolayer graphene material for e.g. transparent electrode, has graphene layer arranged on flat board or catalytic layer, where catalytic layer is arranged on crystal plane that is arranged on substrate.

PARK H B, KIM H, YOON H W, PARK S M, LEE M Y, HO B P, HEE W Y, SUN M P, YONG L M, LEE M, PARK H, PARK S, YOON H

Preparation of single-crystal graphene domain involves performing chemical vapor deposition on specific-plane of semiconductor material as catalytic substrate using gaseous or solid carbon.

DI Z, WANG G, XUE Z, ZHANG M, ZHENG X, DAI J, WANG Z

Graphene film used in an electrode is obtainable by epitaxially growing metal layer on surface of substrate, peeling off the metal layer, and depositing graphene onto surface of metal layer.

WODTKE A, YU H K, ALEC W, HAK KI Y, YU H, YUK H K, YUK H

Preparing amino modified graphene oxide involves dissolving graphene oxide in solvent, depositing obtained paste on upper surface, fixing electric lead on support material using epoxy resin glue, and drying obtained electrode.

CAO H, LI M, LIU C, ZHANG Y

Preparing graphene dendritic crystal involves preparing solution of graphene oxide placing solution in an electric graphite oxide reaction vessel and generating square wave electrical signal in an electrochemical reactor to form dendrite.

ZHANG D, LIU Y

Unitary graphene layer or graphene single crystal useful for heat-spreading applications e.g. as a heat spreader or a heat sink product in e.g. hand-held device comprises closely packed and chemically bonded parallel graphene planes.

ZHAMU A, WANG M, XIONG W, JANG B Z

Preparation of monocrystalline graphene involves performing primary heat treatment of metal substrate, growing monocrystalline graphene, etching, reducing density of graphene, growing graphene, etching and repeating growing and etching.

CHENG H, MA T, REN W

Epitaxial graphene growth and transfer on gallium nitride substrate by chemical vapor deposition and chemical etching involves placing silicon carbide substrate in metal organic chemical vapor deposition reactor and adding ammonia.

HAO Y, NING J, WANG D, ZHANG J, CHAI Z, HAN D, YAN Y

Graphene growing platform comprises quartz boat, quartz plate, quartz stone and base provided on bottom of quartz plate, where base and shape of bottom of quartz boat are matched with each other.

JIN H, LIU Z, PENG P, WANG Z, ZHOU Z

Epitaxial growth method of graphene thin film used for manufacturing graphene device, involves providing substrate into reaction chamber, introducing hydrogen, providing copper, processing, then introducing hydrogen and annealing.

WANG D, ZHANG J, NING J, HAO Y, CHAI Z, HAN D, YAN Y