国家/地区 美国（6）
IPC部 B（6）
IPC大类 B82（6） C30（6） C01（4）
C23（4） H01（3）
IPC小类 B82Y（6）
IPC B82Y040/00（5） B82Y030/00（4） C01B031/04（4）
C30B029/02（3） B82Y099/00（2） C01B032/186（2）
C23C016/26（2） C30B025/02（2）
发明人 WANG H（2）
公开年 2012（6）
申请年 2012（6）
专利权人 WANG H（2）

Method of disposing graphene thin film over target receiving substrate involves hetero-epitaxially growing graphene thin film on catalyst thin film containing a metal and disposing graphene thin film and catalyst thin film.

VEERASAMY V S

Copper foil used for manufacturing graphene, has glossiness or more than preset value, and average grain size more than preset value after being heated in atmosphere containing hydrogen and argon at specific conditions.

CHIBA YOSHIHIRO, CHIBA Y, YOSHIHIRO C, CHIBA G

Manufacturing electrode, used in e.g. supercapacitor, comprises using precursor particles to form nanoparticles on graphene sheet and diffusing and re-crystallizing nanoparticles to form single-crystal structure on surface of graphene sheet.

DAI H, WANG H

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X

Making graphene on diamond substrate, comprises applying metal layer to crystallographic face of diamond substrate, and heating diamond substrate under vacuum to convert portion of diamond substrate at crystallographic face into graphene.

SUNG C, SONG J

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y