国家/地区 世界知识产权组织（6）
IPC部 C（6）
IPC大类 C01（6） C30（6） H01（3）
B01（2） C23（2）
IPC小类 C30B（6）
IPC C30B029/02（4） C01B032/186（3） C01B032/182（2）
C01B032/184（2） C23C016/26（2） C30B030/02（2）
发明人
公开年 2022（3） 2023（3）
申请年 2022（6）
专利权人

System for realizing formation of high throughput and high yield graphene for use in applications such as batteries, ultra-capacitors and fuel-cells, has gas distribution subsystem for dispensing annealing gas composition to inner side of processing sub-enclosure.

PHILPOTT R, BARAKET M, SHERRILL V

Pellicle used for reticle for extreme-UV exposure, comprises pellicle film through which extreme-UV rays transmit and support frame for supporting pellicle film, where pellicle film comprises multilayer thin film structure.

KIM Y H, KIMYONGHWAN

Device used to conversion of feedstock to resultant material having higher degree of crystallinity than feedstock comprises constraining reservoir, electrodes, compression system, alternating current power source and electrical controller.

MANCEVSKI V, LUONG D X, COOKSEY T, WILLIAMS J, MAZOR E, ZHANG Z, JAY B

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Ionic plastic crystal used in electrochemical cell, supercapacitor, and solid electrolyte composition for electrochemical cell, comprises delocalized anion paired with cation derived from organic guanidine, amidine or phosphazene superbase.

DAIGLE J, BARRAY F, GUERFI A, FLEUTOT B, GARITTE E, KRACHKOVSKIY S, KOH K S

Film formation method involves forming metal film on silicon-containing film of substrate, forming a graphene film on metal film, where metal film is silicided by heating metal film, and continuously performing film forming process.

UEDA H, WADA M, ZHEN