国家/地区 美国（43）
IPC部 C（43）
IPC大类 C01（43）
IPC小类 C01B（43）
IPC C23C016/26（43）
发明人 HONG B（4） HONG B H（4） AHN J（3）
AHN J H（3） CHOI J（3） FAN F Y（3）
FAN S（3） JIANG K（3） LEE E（3）
LIN X（3） LIN X Y（3） SHIN H（3）
SHIN H J（3） WHANG D（3） WHANG D M（3）
公开年 2012（12） 2013（9） 2014（4） 2015（4） 2016（4） 2011（3） 2017（3） 2021（2）
申请年 2011（12）  2012（9）  2013（5）  2014（4）  2016（4）  2015（3）  2010（2）  2021（2） 
专利权人 SAMSUNG ELEC.（6） SAMSUNG TECH.（4） HANWHA TECHW.（3） HON HAI PREC.（3）
HONGFUJIN PR.（3） KOREA ADVANC.（3） UNIV SUNGKYU.（3） UNIV TSINGHU.（3）
BOE TECHNOLO.（2） COMMISSARIAT.（2） GRAPHENE SQU.（2） HANWHA AEROS.（2）
KOREA ADV IN.（2） KOREA INST S.（2） TE CONNECTIV.（2） TOSHIBA KK（2）
TYCO ELECTRO.（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Transferring graphene involves forming graphene on first substrate, forming polymer precursor mixture on second substrate, providing graphene oppositely to second substrate having polymer precursor mixture.

GU T J, JANG W, SEO Y, WHANG D, WHANG D M, SEO Y M, JANG W S

Process for preparing graphene layer with better electrical conductivity, involves doping zone of graphene layer to form doped graphene zone including stabilized sheet resistance, where doping is carried out by surface of graphene layer.

LE POCHE H, CARELLA A, DIJON J, OKUNO H, RAUX E

Processing method for growing metal-doped graphene, involves performing plasma enhanced chemical vapor deposition process with carbon precursor, metal precursor, and predetermined element precursor to form metal-doped graphene.

HUANG K, CHI Y, JI Y

Production of layered structure involves depositing catalyst structure onto substrate top surface containing non-electroconductive material, depositing graphene structure onto catalyst structure, and partially removing catalyst structure.

LUTZ T, PURKL F, ROELVER R, ROHLFING F

Producing highly conducting film of highly oriented conductor-bonded graphene sheets, useful in thermal management device, comprises e.g. preparing graphene dispersion having discrete graphene sheets dispersed in fluid medium.

ZHAMU A, JANG B Z

Composite structure of graphene and carbon nanotube configured in a three-dimensional form used in electrodes, comprises graphene platelets, metal particles coated on graphene platelets, and carbon nanotubes formed on metal particles.

WU M Y, HSIEH C, PENG C, WU Y, XIE C, HSIEH C Y, PENG C S

Doping method of graphene for manufacturing graphene composite electrode and graphene structure, involves forming precursor polymer layer for doping on substrate, and positioning graphene on substrate.

MOON J, PARK W, PARK S, JO I, HONG B, SAN MOON J, SU C I, BAE P W, BEOM P S, HUI H B, ZHENSHAN W, WONBAE P, SUBEOM P, INSU J, BYUNGHEE H

Polymer nanomesh used for preparation of graphene nanomesh, has planar structure having cyclized nanomesh-forming polymer and two-dimensional holes arranged on planar structure.

JOH H, SON S Y, LEE S H, KIM T

Method for preparing graphene conductive film for flexible touch device, involves growing graphene layer on metal-catalyzed base, and coating polyamic acid solution layer on graphene layer, where polyimide film is formed by thermal curing.

DI Y