国家/地区 美国（12）
IPC部 C（12）
IPC大类 C01（12） C23（12） H01（12）
B82（11） B32（6） B01（2）
B05（2）
IPC小类 C01B（12）
IPC C23C016/26（12）
发明人 FAN F Y（3） FAN S（3） JIANG K（3）
LIN X（3） LIN X Y（3） XIAO L（3）
HONG B（2） HONG B H（2） LEE K（2）
公开年 2012（12）
申请年 2011（9）  2012（2） 
专利权人 HON HAI PREC.（3） HONGFUJIN PR.（3） UNIV TSINGHU.（3） HANWHA TECHW.（2）
KOREA ADV IN.（2） SAMSUNG ELEC.（2） SAMSUNG TECH.（2）

Making graphene/carbon nanotube composite structure, comprises growing graphene film on surface of metal substrate by chemical vapor deposition method, cooling metal substrate, and providing carbon nanotube film structure on graphene film.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making a graphene or carbon nanotube composite structure, comprises e.g. growing graphene film on first surface of metal substrate by chemical vapor deposition method, and combining carbon nanotube film structure with graphene film.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making a graphene composite structure used as electrode involves growing a graphene film on the first surface of the metal substrate by a chemical vapor deposition method; and etching the metal substrate from the second surface.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Forming multi-layer graphene involves forming stack of graphitizing metal catalyst layer and graphene by repeatedly forming the catalyst layer on substrate, and forming graphene on the catalyst layer; and removing the metal catalyst layer.

WOO Y, CHOI J, CHOI W, SHIN H, YOON S, WOO Y S, CHOI J Y, CHOI W M, SHIN H J, YOON S M

Graphene synthesis chamber for synthesizing graphene comprises chamber case in which substrate comprising metal thin film, gas supply unit, main heating unit which emits light to inner space to heat substrate; and auxiliary heating unit.

WON D, NAM W, WON D K, NAM W S

Formation of graphene-based device used in electronic field, involves depositing carbon on substrate having dielectric material, annealing carbon-deposited substrate, and forming ordered graphene on dielectric material.

KELBER J A, GADDAM S S, BJELKEVIG C L

Manufacture of transparent graphene film for device e.g. display, involves forming graphene oxide thin film on substrate, performing chemical reduction, and carrying out secondary thermal reduction and nitrogen doping.

KIM S O, HWANG J O, LEE D H

Graphene structure for producing three-dimensional shape of e.g. electronic circuit, comprises template having three-dimensional shape and rod shape, graphene to cover portion of outer circumference of template, and supporting layers.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Forming graphene, comprises providing substrate and carbon-containing reactant source in chamber, and radiating laser beam on substrate to decompose carbon-containing reactant source and form graphene over substrate.

LEE K, CHOI I, CHOI S, HONG B, LEE K J, CHOI I S, CHOI S Y, HONG B H

Method of directly synthesizing uniform multilayer graphene of semiconductor device, involves passing reaction gas into reaction chamber, after temperature in reaction chamber reaches specific level.

ZHONG Z, LEE S, LEE K