国家/地区 美国（4） 中国（3） 韩国（2） 世界知识产权组织（2）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C23C016/26（5）
发明人
公开年 2017（3） 2016（2）
申请年 2016（5）
专利权人

Processing method for growing metal-doped graphene, involves performing plasma enhanced chemical vapor deposition process with carbon precursor, metal precursor, and predetermined element precursor to form metal-doped graphene.

HUANG K, CHI Y, JI Y

Production of layered structure involves depositing catalyst structure onto substrate top surface containing non-electroconductive material, depositing graphene structure onto catalyst structure, and partially removing catalyst structure.

LUTZ T, PURKL F, ROELVER R, ROHLFING F

Graphene film manufacturing device for forming transparent display, has bottom roll chamber where catalyst metal film is rolled in loading bobbin, that is connected to deposition chamber.

KIM Y K, YONG K K

Doping method of graphene for manufacturing graphene composite electrode and graphene structure, involves forming precursor polymer layer for doping on substrate, and positioning graphene on substrate.

MOON J, PARK W, PARK S, JO I, HONG B, SAN MOON J, SU C I, BAE P W, BEOM P S, HUI H B, ZHENSHAN W, WONBAE P, SUBEOM P, INSU J, BYUNGHEE H

Polymer nanomesh used for preparation of graphene nanomesh, has planar structure having cyclized nanomesh-forming polymer and two-dimensional holes arranged on planar structure.

JOH H, SON S Y, LEE S H, KIM T