国家/地区 美国（4） 日本（2） 韩国（2）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C01B031/02（6）
发明人
公开年 2015（4）
申请年 2014（6）
专利权人

Manufacturing method of graphene laminated structure, involves setting film thickness of iron carbide film more than thickness of boron nitride layer.

OSHIMA H

Manufacture of graphene film used for e.g. semiconductor, involves arranging substrate, providing metallic catalytic material and reducing gas, raising temperature, providing carbon-containing gas, and generating carbon atoms.

YEN W, CHUEH Y, YEN W C, CHUEH Y L

Manufacturing method of graphene film used in e.g. electronic device, photo-electronic device involves growing nano graphenes on insulating substrate by pyrolyzing carbon source included in reactive gas, without using metal catalyst.

SONG Y W, PARK J H

Usage of cellulosic polymer for preparing graphene ink composition for forming composite, involves concentrating exfoliated graphene by contacting exfoliated graphene medium with aqueous medium in graphene and cellulosic polymer.

HERSAM M C, LIANG Y T, SECOR E B, PRABHUMIRASHI P L, PUNTAMBEKAR K P, GEIER M L

Manufacturing method for graphene transparent conductive film involves making graphene grow on base-material surface by performing plasma processing using hydrogen gas in bottom of pressure reduction in heated state.

HASEGAWA M, KATO R, TSUGAWA K, ISHIHARA M, OKIKAWA Y, YAMADA T

Manufacture of graphene as base material for electronic circuits, carbon-based electronic device and electromagnetic device, involves forming metal layer on thermal expansion compensation substrate, and forming graphene on metal layer.

CHOI M, KIM T, MOON J, JUNG M, KIM T H