国家/地区 美国（4） 韩国（2）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C01B031/02（5）
发明人
公开年 2015（5）
申请年 2014（4） 
专利权人

Manufacture of graphene film used for e.g. semiconductor, involves arranging substrate, providing metallic catalytic material and reducing gas, raising temperature, providing carbon-containing gas, and generating carbon atoms.

YEN W, CHUEH Y, YEN W C, CHUEH Y L

Manufacturing method of graphene film used in e.g. electronic device, photo-electronic device involves growing nano graphenes on insulating substrate by pyrolyzing carbon source included in reactive gas, without using metal catalyst.

SONG Y W, PARK J H

Usage of cellulosic polymer for preparing graphene ink composition for forming composite, involves concentrating exfoliated graphene by contacting exfoliated graphene medium with aqueous medium in graphene and cellulosic polymer.

HERSAM M C, LIANG Y T, SECOR E B, PRABHUMIRASHI P L, PUNTAMBEKAR K P, GEIER M L

Manufacturing method for graphene transparent conductive film involves making graphene grow on base-material surface by performing plasma processing using hydrogen gas in bottom of pressure reduction in heated state.

HASEGAWA M, KATO R, TSUGAWA K, ISHIHARA M, OKIKAWA Y, YAMADA T

Formation of graphene layer on substrate used for semiconductor device, involves forming carbon source layer and metal catalyst layer on substrate, converting carbon source layer into graphene layer and removing metal catalyst layer.

BAEK J, JEON S, LEE J, BAEK J W, JEON S W, LEE J S