国家/地区 美国（5） 中国（4） 日本（3） 韩国（2） 世界知识产权组织（2）
IPC部 C（7）
IPC大类 C23（7）
IPC小类 C23C（7）
IPC C23C016/01（7）
发明人 CHOI J（2）
公开年 2012（2） 2013（2）
申请年 2011（3） 
专利权人 SAMSUNG ELEC.（2）

Preparing ultra-flexible translucent complex conductive film useful in e.g. flexible touch screen comprises e.g. placing copper foil, growing graphene nano-wall on the surface and coating ethylene-vinyl acetate polymer and butyl acetate.

GUO X, CHEN Z, LIU Y, ZHANG W, ZHAO L, LIU C, YIN L, JIN K, ZHNG T

Silicon dioxide substrate based graphene transparent conductive film manufacturing method, involves forming graphene transparent conductive film on upper part of metal substrate to form substrate, and etching metal substrate.

SHI Y

Graphene sheet useful in a transparent electrode, a solar cell, a conductive thin film, a display device, a hydrogen storage medium and an electrical device, comprises intercalation compound comprising organic compound, and graphene layers.

CHOI J

Manufacture of transparent conductive component used for transparent electrode for touch panel, involves forming graphene layer on metal foil, and forming resin layer comprising reactive-curable resin composition on graphene layer.

INOUE T, INOUE M, TAMARU H, TSUJIMOTO H, MINAMI N

Method of directly synthesizing uniform multilayer graphene of semiconductor device, involves passing reaction gas into reaction chamber, after temperature in reaction chamber reaches specific level.

ZHONG Z, LEE S, LEE K

Manufacture of graphene used for forming graphene sheet, involves supplying carbon source-containing gas to metal catalyst layer for graphene growth, and forming graphene by inductively coupled plasma-chemical vapor deposition.

AHN J, BAE S K, HONG B H, JANG H, JUNG M H, KIM S J, LEE Y, YOO J B, AHN J H, LIU Z, BAE S, HONG B, LI R, JUNG M, KIM S

Preparing graphene sheet, useful in e.g. electrical device, comprises forming film comprising graphitizing catalyst, heat-treating gaseous carbon source in presence of the catalyst to form graphene, and cooling graphene to form sheet.

CHOI J, SHIN H, YOON S, CHOI J Y, SHIN H J, YOON S M, IN Z