国家/地区 美国（4） 世界知识产权组织（4） 台湾（3） 中国（2） 日本（2） 韩国（2）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C01B032/186（5）
发明人
公开年
申请年
专利权人

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Graphene deposition process for deposition of graphene on substrates, involves generating radio frequency plasma at location proximate to substrate, while flowing precursor gas containing carbon through plasma and over substrate.

CHEN Z, CHUGH S, MEHTA R

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A