国家/地区 中国（10）
IPC部 C（10）
IPC大类 H01（10） C23（5） C01（2）
IPC小类 H01J（10）
IPC C23C016/26（5） H01J037/32（4） H01J009/02（3）
C23C016/04（2） C23C016/44（2） C23C016/56（2）
H01J037/20（2） H01L021/02（2）
发明人 WANG B（2） YIN Y（2）
公开年 2021（5） 2022（5）
申请年 2021（10）
专利权人

Preparing petal-shaped graphene field emission cold cathode, comprises selecting and cleaning substrate, selecting silicon sheet and copper foil copper foil as substrate, and growing layer of copper film on substrate surface.

ZHANG X, LEI W, ZHAO Z, ZHAO N

Graphene grid used as cryo-electron microscope grid for structural analysis of target substance e.g. protein, has structure in which functional group is introduced into surface of graphene.

TSUYOSHI I, HARUYASU A, KEI O, KEIICHI N, TAKAYUKI K, FUMIAKI M, JUNSO F, SHOTA K, KUMANO S, FUJITA J, MAKINO F, KATO T, NAMBA K, OHKUBO K, ASAHARA H, INOUE G

Preparing diamond-multilayer graphene composite cathode material e.g. used in emission display, involves grinding silicon substrate in diamond powder uniformly and compactly, putting grinded silicon substrate into suspension liquid made of diamond powder.

LIU H, GUAN L, WANG B, ZHANG W, XIONG Y

Underwater ultraviolet sterilizing device, has heat conducting shell whose bottom is provided with opening, where upper end surface of transparent quartz glass sheet and inner side surface of shell are surrounded to form sealing cavity.

YIN Y, ZHANG Z, MAO M

Preparing graphene field emission source useful in field emission cathode of electronic device e.g. display device, comprises slowly cooling carbon atom dissolved to metal material to form graphene layer by stage cooling, closing power supply to room temperature, and taking out metal material.

QIN C, LI T, WANG Q, LOU H, SHI L, LUO L, HUANG S

Selective deposition on dielectric layer comprises providing semiconductor substrate, selectively depositing graphene on exposed metal surface of metal layer of substrate, and selective depositing dielectrically-deposited material on layer.

NARKEVICIUTE I, VARADARAJAN B N, SHARMA K, NARKEBICHUDDER I

Growing deep UV LED epitaxial structure used in optoelectronic manufacturing, involves depositing isolation layer on graphite disc surface, growing epitaxial structure of deep UV LED on isolation layer surface, and adhering residue on surface of isolation layer to disc by using adhesive tape.

MEI J, YIN Y, GONG C, DING T

Graphene powder surface modified plasma reaction device comprises shell and rotating structure comprising roller and rotating motor, where rotating structure is set in vacuum cavity in shell.

HUANG L, JIAN X

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Electron microscope carrier net using hydrophobic protein film as supporting film comprises hydrophobic protein film arranged on surface of electron microscope carrier net.

FAN H, SUN F, QIAO M, WANG B, ZHU Y