国家/地区 韩国（10）
IPC部 C（6） H（6） B（5）
IPC大类 H01（6） B82（4） C01（4）
B05（2） B32（2） C08（2）
IPC小类 C01B（4） H01L（4） B82B（3）
B05D（2） B32B（2） B82Y（2）
C08K（2） C08L（2） H01B（2）
IPC C01B031/02（3） B05D003/02（2） B82B003/00（2）
C01B031/00（2） C01B031/04（2） C08K003/04（2）
发明人 HONG S（2） KIM G（2） LEE J（2）
公开年 2010（10）
申请年 2008（10）
专利权人 UNIV SEOUL N.（2）

Manufacture of aqueous graphene solution for use in electronic device, involves oxidizing graphite, dispersing graphene oxide using ionic high molecule and aqueous conductive polymer, and reducing graphene oxide.

IM S, LEE G, LEE S, GU LEE S, GYUN LEE G, MYEONG IM S

Graphene variable energy visible light emission penetration optical device for e.g. field emission display, has graphene pieces fixed in substrate, and multiple insulating layers formed at upper part of graphene pieces.

CHOI J, KIM G, U CHOI J, BEOM KIM G

Unipolar hetero-junction depletion-layer transistor for use in high frequency circuit utilized for e.g. wireless communication, has tunnel diode permitting current of carriers in direction of collector, where base includes graphene layer.

LIPPERT G, MEHR W

Electric component used in nitride semiconductor industry, has graphene layer(s) provided on sapphire substrate by epitaxial growth.

SEUNG HYUN C

Manufacturing carbon nanotube-, fullerene- and/or graphene-containing coating for use as electromechanical component or lead frame, involves applying carbon nano-tubes, fullerene or graphene on tin-containing coating by mechanical treatment.

ADLER U, BURESCH I, PRIGGEMEYER S, RODE D, SCHMIDT H, ROHDE D

Controlled growth of graphene film comprises preparing substrate of metal layer having phase diagram with carbon on surface to obtain homogeneous solid solution, exposing layer to controlled flow e.g. carbon atoms and changing the phase.

BARATON L, COJOCARU C S, PRIBAT D, COJOCARU C

Polymer composite contains specific amount of polymer, graphene powder and graphite oxide.

JANG J, JEONG H, KWON D, PARK W, SHIN C

Graphene nanostructure solution manufacturing method for manufacturing graphene nano device utilized in semiconductor device, involves forming solution having graphene nanostructures by dispersing graphene nanostructure in solvent.

HONG S, KOH J

Graphene nanostructure fabricating method for semiconductor device, involves performing anisotropic etching by using aligned oxide nanostructure as mask, and removing remaining oxide nanostructure after anisotropic etching.

HONG S, KIM T H, LEE J, HONG S H, LEE C Y, KIM T

Hydrogen storage material for hydrogen storage device, comprises alkaline earth metal ions and covalent-bonded graphenes having structure by forming junction point with carbon atoms on either end portions of graphene monolayer.

JI S, KIM G, LEE J, PARK N