国家/地区 中国（6）
IPC部 H（4） C（2） G（2）
IPC大类 H01（4）
IPC小类 H01L（3）
IPC H01L021/336（2） H01L029/78（2）
发明人 LIU M（7）
公开年 2012（7）
申请年 2012（3）  2010（2）  2011（2） 
专利权人 INST MICROEL.（3） UNIV SHANDON.（2）

Graphene based optical modulator useful as enabling device for on-chip optical interconnects, comprises at least one active media, a nanoscale oxide spacer, and at least one monolayer graphene sheet adjacent to the spacer.

LIU M, YIN X, ZHANG X

Graphene oxide doped zinc oxide nanometer thin film manufacturing method, involves absorbing-coating mixed solution on sensitive membrane of device and drying in vacuum to obtain graphene doped zinc oxide nanometer film.

HOU C, HUO Z, LI D, LIU M, LONG S, YAN X, WANG X, ZHANG M, XIE C, ZHOU W

Transfer of large area graphite alkene by dipping graphene thin film coated metal substrate on corrosion solution, washing with deionized water, freeze-drying, separating graphene thin ice, and putting graphene thin ice on target substrate.

FAN X, JIANG S, LIU J, LIU M, MAN B, XU S, YANG C, CHEN C, LIU A

Preparation of large-sized graphene saturable absorber mirror, involves forming graphene film on copper foil, coating polymethylmethacrylate, baking, soaking in ferric chloride, removing film, contacting with mirror, and drying.

FAN X, LIU J, LIU M, JIANG S, YANG C, MAN B, XU S

FET, has source and drain contact electrodes and graphene trench region that are linked together, where graphene trench region is formed on upper part of insulating substrate.

LIU X, LIU M, HAN M, JI Z, WANG H, SHANG L

FET, has source/drain contact electrode and graphene trench region formed on insulating medium layer, where source contact and drain contact electrodes are respectively connected with graphene trench region.

LIU X, LIU M, HAN M, JI Z, WANG H, SHANG L

Preparing irradiation, cross-linking accelerant, comprises adding an enolate compound to graphene oxide colloidal suspension, reacting, cooling and filtering to obtain the product.

ZHENG X, DENG P, ZHENG C, YIN Y, LIU M