国家/地区 韩国（3）
IPC部 C（6）
IPC大类 C30（6）
IPC小类 C30B（6） H01L（3）
IPC C30B029/02（3） C30B029/38（3） H01L021/20（2）
发明人 HWANG S W（2） SEONG H K（2） SONE C S（2）
公开年 2012（6）
申请年 2010（6）
专利权人 SAMSUNG LED .（2）

Graphene diamond laminated body for e.g. biosensor comprises graphene which is laminated on the diamond substrate or has nano ribbon film of graphene on diamond substrate.

TOKUDA N, INOKUMA T, FUKUI M, YAMAZAKI S, TAKEUCHI D, MAKINO T, IGUMA T

Manufacture of single crystal involves forming graphene layer on portion(s) of amorphous or polycrystalline sample, floating in air within treatment basin, heating and crystallizing.

JOO I L, CHAN Y H, JUNG H K, YONG S Y, YONG H S, KWANG M K

Substrate manufacture method for nitride single crystal growth, involves forming graphene layer on substrate and forming silicon carbide layer on graphene layer.

SEONG H K, HWANG S W, SONE C S

Manufacturing method of nitride single crystal, involves processing chemically the substrate using etchant to remove graphene layer.

SEONG H K, SUNG Y J, CHUNG H J, HWANG S W, SONE C S

Growing graphene on silicon carbide substrate epitaxially involves adopting formation technology imaging substrate, on surface of substrate, forming graphic array, performing thermal decomposition to patterned substrate and forming graphene.

CHEN X, GUO L, JIA Y, LI K, LIN J, WANG G, WANG W

Forming in-situ engineered defects in graphene, comprises manipulating surface of single crystal region having hexagonal crystal lattice on a substrate to create non-planar features and epitaxially forming layer of carbon atoms on surface.

BARKER D L, ZELINSKI B J, OWENS W R