国家/地区 美国（7）
IPC部 B（5） C（5） H（4）
IPC大类 B82（5） C01（5） B32（4）
H01（4） C23（3） C03（2）
IPC小类 C01B（5） B32B（4） B82Y（4）
C23C（3） H01G（2） H01L（2）
IPC B82Y040/00（4） C01B031/04（4） B82Y030/00（3）
C01B031/02（2） C23C016/26（2） H01G009/00（2）
H01G009/155（2）
发明人 YAGER T A（4）
公开年 2012（7）
申请年 2011（4）  2010（3） 
专利权人 EMPIRE TECHNOLOGY DEV LLC（7）

Graphene integrated energy storage device used in computing device e.g. personal computer, has pseudocapacitance that is formed by surface layer deposition of chemical entity provided on primary electrolyte.

CHEN S, ROTHFUSS C

Graphene-based electronic apparatus e.g. capacitor, comprises primary electrode containing three-dimensional open-cell graphene structure formed by chemical vapor deposition on metal foam substrate.

YAGER T A

Method for transferring layer of graphene from transitional metal substrate onto target substrate, involves conforming layer of graphene to target substrate to form graphene on substrate assembly by applying hydrostatic pressure.

YAGER T A

Producing graphene, comprises fixing seed crystal to support substrate, providing feedstock adjacent to seed crystal about the location, and applying laser beam to heat portion of seed crystal and portion of feedstock.

HAUCK J P

Apparatus useful for e.g. producing graphene from graphite, comprises multilayer co-extrusion device comprising many series-coupled layer multiplication dies, and configured to exfoliate graphene by co-extrusion of processing material.

CRUZ C A

Formation of structure, involves applying photoresist layer and graphene layer on substrate, and applying light through mask including pattern to graphene layer to form pattern on photoresist layer through graphene layer.

YAGER T A, MILLER S A

Forming recrystallized metal layer for growing graphene monolayer involves forming metal layer on substrate; forming layer of dielectric material on the metal layer; and directionally recrystallizing the metal layer.

YAGER T A