国家/地区 美国（6） 韩国（5） 世界知识产权组织（5） 欧洲专利局（EPO）（3） 日本（3）
IPC部 B（6）
IPC大类 B82（6）
IPC小类 B82Y（6）
IPC B82Y040/00（6）
发明人 BERRY V（2） SEACRIST M R（2）
公开年 2013（6）
申请年 2012（4） 
专利权人 MEMC ELECTRO.（2） SUNEDISON SE.（2） UNIV KANSAS .（2）

Preparing multilayer article from semiconductor substrate involves forming metal film on front of substrate; forming layer of boron nitride; and forming layer of graphene between substrate and the back metal film surface.

SEACRIST M R, BERRY V, NGUYEN P T

Method for forming composition of matter to control macroscopically continuous single and multiple layer graphene films, involves forming layers of graphene on metal oxide opposite major surface of metal by carbon molecular beam epitaxy.

KELBER J, KELBER J A

Forming cleaned nanotube-graphene hybrid thin film on a substrate, comprises depositing the nanotube thin-film over a substrate to produce a layer of nanotube thin-film, and removing impurities from surface of layer of nanotube thin-film.

BOL A A, CHANDRA B, KASRY A, MAAROUF A, MARTYNA G J, TULEVSKI G S

Preparing a semiconductor substrate, useful for forming a multilayer article, comprises forming a metal film on the substrate, contacting metal film surface with a carbon-containing gas and precipitating carbon atoms to form graphene layer.

SEACRIST M R, BERRY V

Forming graphene layer on surface of substrate, comprises forming silicon-carbide film on free surface of silicon layer and gradually heating substrate until silicon of first row of atoms of silicon-carbide film is sublimated.

OUERGHI A

Growing patterned single-crystalline graphene comprises depositing a graphene growth barrier that defines a pattern on a substrate surface, and growing graphene on the substrate surface, around the graphene growth barrier.

ARNOLD M S, GOPALAN P, SAFRON N S, KIM M